IXGT32N90B2 IXYS, IXGT32N90B2 Datasheet - Page 5

• Manufacturer Part Number: IXGT32N90B2
• Description: IGBT 900V 45A TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT32N90B2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 32A
• Current - Collector (ic) (max): 64A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 900
• Ic25, Tc=25°c, Igbt, (a): 64
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 165
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.25
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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18
16
14
12
10
16
14
12
10
16
14
12
10
8
6
4
2
0
8
6
4
2
0
8
6
4
2
0
10
25
0
Energy Loss on Collector Current
Energy Loss on Gate Resistance
T
V
V
Fig. 12. Dependence of Turn-off
Fig. 16. Dependence of Turn-off
35
Fig. 14. Dependence of Turn-off
5
R
V
V
J
GE
CE
R
V
V
Energy Loss on Tem perature
GE
CE
= 125
G
GE
CE
G
20
= 15V
= 720V
= 5Ω
10
= 5Ω
45
= 15V
= 720V
= 15V
= 720V
T
º
J
C
15
55
- Degrees Centigrade
30
I
C
R
20
65
- Amperes
G
- Ohms
40
25
T
75
J
= 125
30
85
º
50
C
35
95
I
I
C
C
I
I
C
I
T
C
C
I
= 64A
= 64A
J
C
= 32A
105 115 125
= 32A
40
= 16A
= 25
= 16A
60
º
45
C
70
50
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
16
14
12
10
8
6
4
2
0
25
10
0
R
V
V
35
Energy Loss on Collector Current
Energy Loss on Gate Resistance
Fig. 17. Dependence of Turn-on
GE
CE
G
Fig. 13. Dependence of Turn-on
R
V
V
Energy Loss on Tem perature
T
V
V
Fig. 15. Dependence of Turn-on
5
GE
CE
J
G
= 5 Ω
GE
CE
20
= 1 5V
= 720V
= 125
= 5Ω
45
= 15V
= 720V
10
= 15V
= 720V
T
J
º
55
C
- Degrees Centigrade
15
30
I
C
65
R
20
- Amperes
G
- Ohms
75
40
25
IXGH 32N90B2
IXGT 32N90B2
T
85
J
30
= 125
50
I
C
95
35
T
= 64A
I
º
C
I
I
J
C
C
C
I
C
I
= 25
= 32A
105 115 125
C
= 16A
= 64A
40
= 32A
= 16A
60
º
C
45
50
70