IXGT40N60B2 IXYS, IXGT40N60B2 Datasheet - Page 3
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IXGT40N60B2
Manufacturer Part Number
IXGT40N60B2
Description
IGBT 600V 75A TO-268
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGH40N60B2.pdf
(5 pages)
Specifications of IXGT40N60B2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 30A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.1
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
3.5
2.5
1.5
60
50
40
30
20
10
60
50
40
30
20
10
0
4
3
2
1
0
0.5
0.5
5
Fig. 5. Collector-to-Em itter Voltage
6
Fig. 3. Output Characteristics
Fig. 1. Output Characte ristics
vs. Gate-to-Em itter voltage
7
1
1
8
V
I
V
C
GE
9
GE
V
@ 125 Deg. C
= 60A
@ 25 Deg. C
= 15V
C E
1.5
30A
15A
V
1.5
V
= 15V
10 11 12 13 14 15 16 17
13V
11V
G E
CE
13V
11V
- Volts
- Volts
- Volts
2
2
T
J
9V
7V
5V
= 25ºC
9V
7V
5V
2.5
2.5
3
3
180
150
120
210
180
150
120
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
90
60
30
90
60
30
0
0
Fig. 2. Extended Output Characte ristics
-50
3
0
V
Fig. 4. De pende nce of V
-25
GE
T
Fig. 6. Input Adm ittance
4
1
J
= 125ºC
= 15V
-40ºC
25ºC
V
0
T
GE
J
2
5
- Degrees Centigrade
Tem perature
@ 25 de g. C
= 15V
25
13V
V
V
G E
C E
3
6
- Volts
50
- Volts
IXGH 40N60B2
IXGT 40N60B2
4
7
11V
9V
7V
5V
75
I
I
I
CE(sat)
C
C
C
5
= 30A
= 15A
= 60A
8
100
on
6
125
9
150
7
10