IXGT50N60C2 IXYS, IXGT50N60C2 Datasheet
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Manufacturer Part Number
IXGT50N60C2
Description
IGBT 600V 75A TO-268
Specifications of IXGT50N60C2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
400W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
48
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.74
Rthjc, Max, Igbt, (°c/w)
0.31
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFAST
C2-Class High Speed IGBTs
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Symbol
V
I
I
V
C25
C110
CM
GES
CES
GEM
C
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
© 2004 IXYS All rights reserved
d
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
Test Conditions
I
V
V
V
I
C
C
C
C
C
C
J
J
GE
CE
GE
CE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= V
= 0 V
= 0 V, V
= 40 A, V
CES
TM
VJ
GE
GE
= 125°C, R
= ±20 V
= 15 V
CE
= V
IGBT
GE
GE
= 1 MΩ
G
≤
= 10 Ω
T
T
T
600V
(T
J
J
J
= 25°C
= 150°C
= 125°C
J
= 25°C, unless otherwise specified)
Advance Technical Data
TO-247 AD
TO-268
IXGH 50N60C2
IXGT 50N60C2
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
2.1
1.8
1.13/10Nm/lb.in.
I
CM
300
600
600
±20
±30
= 80
400
300
150
75
50
max.
±100
4
6
5.0
2.7
50
1
mA
nA
°C
µA
°C
°C
°C
W
V
V
V
V
A
A
A
A
g
g
V
V
V
TO-247 AD
TO-268
G = Gate,
E = Emitter,
Features
Applications
Advantages
(IXGH)
(IXGT)
Very high frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
Very fast switching speeds for high
frequency applications
V
I
V
t
C25
fi typ
CES
CE(sat)
G
C
G
E
C = Collector,
TAB = Collector
= 600 V
=
=
=
E
DS99147(01/04)
2.7 V
75 A
48 ns
C (TAB)
C (TAB)
Related parts for IXGT50N60C2
IXGT50N60C2 Summary of contents
... GE(th CES CE CES ± GES CE(sat © 2004 IXYS All rights reserved Advance Technical Data IXGH 50N60C2 IXGT 50N60C2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 300 = 10 Ω ≤ 600V 400 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. TO-247 AD TO-268 ...
... R thJC R (TO-247) thCK Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. ...
... Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4.8 4.5 4 80A C 3.9 40A 20A 3.6 3.3 3 2.7 2 Volts G E © 2004 IXYS All rights reserved Fig. 2. Extended Output Characte ristics 320 9V 280 240 7V 200 160 6V 120 3 1.2 9V 1.1 7V 1.0 0.9 6V 0.8 ...
... I = 80A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 c 2.4 2.1 1.8 1.5 1 ...
... V = 300V 40A 10mA nanoCoulombs G 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 © 2004 IXYS All rights reserved 100 80A 20A 105 115 125 10000 1000 100 10 90 120 150 Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 50N60C2 IXGT 50N60C2 Fig ...
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