IXGT10N170 IXYS, IXGT10N170 Datasheet
IXGT10N170
Specifications of IXGT10N170
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IXGT10N170 Summary of contents
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... 0.8 • V CES CE CES 0V ± 20V GES 15V, Note 1 CE(sat) C C90 GE © 2008 IXYS CORPORATION, All rights reserved IXGH10N170 IXGT10N170 Maximum Ratings 1700 Ω 1700 ± 20 ± Ω 0.8 • V CES 110 -55 ... +150 150 -55 ... +150 300 260 1.13/ Characteristic Values Min. ...
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... Characteristic Values Min. Typ. 3.8 6.3 33 700 0.5 • CES 132 600 30 270 135 495 0.25 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH10N170 IXGT10N170 TO-247 AD Outline Max Terminals Gate Dim. Millimeter ns Min 2.87 2 ...
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... Junction Temperature V = 15V 20A C I -50 - Degrees Centigrade J Fig. 6. Input Admittance 5 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8 Volts GE IXGH10N170 IXGT10N170 V = 15V GE 13V 11V CE(sat) =10A 100 125 150 40ºC J 25ºC 125ºC 8.5 9.0 9.5 10.0 IXYS REF: G_10N170(3N)10-13-08-A ...
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... IXYS reserves the right to change limits, test conditions, and dimensions 40ºC J 25ºC 125º 1,000 100 1200 1400 1600 1800 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Second Fig. 8. Gate Charge 850V 10A 10mA NanoCoulombs G Fig. 10. Capacitance C ies C oes C res MHz Volts CE 0.1 IXGH10N170 IXGT10N170 ...
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... T = 125º 15V 850V CE 550 500 I = 10A C 450 400 350 I = 20A C 300 250 200 Ohms G IXGH10N170 IXGT10N170 160 d(off) 150 = 15V GE 140 130 120 110 100 90 95 105 115 125 500 450 400 350 300 250 200 150 100 100 ...