IXGR48N60B3D1 IXYS, IXGR48N60B3D1 Datasheet - Page 4

• Manufacturer Part Number: IXGR48N60B3D1
• Description: IGBT 600V FRD ISOPLUS247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGR48N60B3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 40A
• Current - Collector (ic) (max): 60A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS 247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 27
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.1
• Tfi, Typ, Tj=25°c, Igbt, (ns): 116
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.3
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 27
• Rthjc, Max, Diode, (ºc/w): 1.5
• Package Style: ISOPLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
10,000
1,000
1.00
0.10
0.01
100
80
70
60
50
40
30
20
10
10
0.00001
0
0
0
f
= 1 MHz
20
5
Fig. 7. Transconductance
10
40
Fig. 9. Capacitance
T
0.0001
J
= - 40ºC
I
15
C
- Amperes
60
V
CE
- Volts
20
25ºC
80
125ºC
C res
C ies
C oes
25
Fig. 11. Maximum Transient Thermal Impedance
100
0.001
30
120
35
Pulse Width - Seconds
140
40
0.01
140
120
100
16
14
12
10
80
60
40
20
0
8
6
4
2
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
150
T
R
dV / dt < 10V / ns
C
G
CE
J
G
= 40A
= 10mA
= 125ºC
= 5Ω
= 300V
20
200
0.1
250
Fig. 8. Gate Charge
40
Q
300
G
V
- NanoCoulombs
CE
350
- Volts
60
400
IXGR48N60B3
IXGR48N60B3D1
IXYS REF: G_48N60B3D1(56) 05-05-08-A
1
450
80
500
550
100
600
10
120
650