IXGT40N60B2D1 IXYS, IXGT40N60B2D1 Datasheet - Page 5
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IXGT40N60B2D1
Manufacturer Part Number
IXGT40N60B2D1
Description
IGBT 600V 75A DUAL TO-268
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGH40N60B2D1.pdf
(6 pages)
Specifications of IXGT40N60B2D1
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.7V @ 15V, 30A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.7
Tfi, Typ, Tj=25°c, Igbt, (ns)
82
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.1
Rthjc, Max, Igbt, (°c/w)
0.31
If, Tj=110°c, Diode, (a)
30
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2003 IXYS All rights reserved
10000
1000
275
250
225
200
175
150
125
100
100
0.45
0.35
0.25
0.15
0.05
75
10
0.4
0.3
0.2
0.1
25
0
1
t
t
R
V
V
35
Sw itching Tim e on Te m perature
d(off)
fi
Fig. 13. Dependence of Turn-Off
GE
CE
G
f = 1 MHz
-
5
= 3.3Ω
= 400V
= 15V
- - - - -
I
C
45
Fig. 15. Capacitance
= 60A
T
10
J
55
- Degrees Centigrade
15
65
V
C E
75
20
- Volts
I
C
= 30A
85
Fig. 16. Maxim um Trans ient Therm al Res istance
25
95
C
C
C
30
105 115 125
ies
oes
res
I
10
C
= 15A
35
Pulse Width - milliseconds
40
15
12
9
6
3
0
0
10
V
I
I
C
G
CE
= 30A
= 10mA
= 300V
20
100
Fig. 14. Gate Charge
30
Q
G
- nanoCoulombs
40
50
IXGH 40N60B2
IXGT 40N60B2
60
70
80
90
1000
100