IXGT32N90B2D1 IXYS, IXGT32N90B2D1 Datasheet - Page 6

• Manufacturer Part Number: IXGT32N90B2D1
• Description: IGBT 900V 64A FRD TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT32N90B2D1

• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 32A
• Current - Collector (ic) (max): 64A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 900
• Ic25, Tc=25°c, Igbt, (a): 64
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 32
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 165
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.25
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 27
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS reserves the right to change limits, test conditions, and dimensions.
550
525
500
475
450
425
400
375
350
500
450
400
350
300
250
200
150
100
400
350
300
250
200
150
100
4
Sw itching Tim e on Gate Resistance
15
Sw itching Tim e on Collector Current
25
I
C
Fig. 18. Dependence of Turn-off
Sw itching Tim e on Tem perature
Fig. 22. Dependence of Turn-off
Fig. 20. Dependence of Turn-off
= 16A, 32A, 64A
6
20
35
I
C
25
45
8
= 64A, 32A, 16A
T
J
- Degrees Centigrade
30
R
55
1 0
t
T
V
G
d(off)
I
J
CE
C
- Ohms
35
65
= 125ºC, V
t
R
V
- Amperes
d(off)
1 2
= 720V
G
CE
= 5Ω, V
t
R
V
d(off)
40
75
I
= 720V
CE
G
C
1 4
= 5Ω , V
= 32A, 16A
= 720V
85
45
I
t
C
fi
1 6
GE
GE
= 64A, 32A, 16A
- - - - -
t
fi
95
50
= 15V
= 15V
GE
- - - - -
T
t
1 8
T
J
fi
105 115 125
J
= 15V
= 125
55
- - - - -
= 25
20
60
º
º
400
390
380
370
360
350
340
330
320
C
C
65
45
40
35
30
25
20
1 5
40
35
30
25
20
15
10
30
28
26
24
22
20
18
16
14
12
10
25
4
10
Sw itching Tim e on Gate Resistance
Sw itching Tim e on Collector Current
T
I
t
T
V
Fig. 19. Dependence of Turn-on
Sw itching Tim e on Tem perature
C
d(on)
t
R
V
I
35
Fig. 23. De pendence of Turn-on
J
J
CE
d(on)
C
Fig. 21. Dependence of Turn-on
6
t
R
V
G
CE
= 64A
d(on)
= 125
= 125ºC, V
= 32A
G
CE
= 5Ω , V
= 720V
20
45
= 720V
= 5Ω, V
T
= 720V
8
J
º
- Degrees Centigrade
C
55
30
R
I
1 0
C
GE
t
GE
t
65
ri
G
ri
GE
- Amperes
t
T
- Ohms
= 15V
ri
- - - - -
= 15V
- - - - -
J
= 15V
1 2
- - - -
I
75
= 25
40
C
= 1 6A
85
IXGH 32N90B2D1
IXGT 32N90B2D1
º
1 4
C
50
I
C
95 105 115 125
= 64A
I
1 6
I
C
C
= 16A
= 32A
60
1 8
20
70
1 80
1 50
1 20
90
60
30
0
1 00
90
80
70
60
50
40
30
20
1 0
0
1 50
1 25
1 00
75
50
25
0