IXGT20N120BD1 IXYS, IXGT20N120BD1 Datasheet - Page 4

• Manufacturer Part Number: IXGT20N120BD1
• Description: IGBT 1200V FRD TO-268
• Manufacturer: IXYS

Specifications of IXGT20N120BD1

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 6
1 4
1 2
1 0
1 4
1 2
1 0
8
6
4
2
0
90
80
70
60
50
40
30
20
8
6
4
2
0
1 0
0
Fig. 11. Reverse-Bias Safe Operating Area
Fig. 9. Dependence of E
0
0
1 00
V
V
So lid lines - R
Dashed lines - R
G E
C E
T
V
V
Fig. 7. Dependence of E
J
G E
C E
T
R
dV/dT < 10V/ns
= 1 5V
= 960V
= 1 25ºC
25
J
G
1 0
300
= 1 5V
= 960V
T
= 125
= 10 Ohms
J
- Degrees Centigrade
º
50
20
C
500
G
R
= 56 Ohms
V
G
G
CE
= 5 Ohms
- Ohms
75
30
700
- Volts
off
on Temperature
1 00
40
900
off
I
I
I
I
I
on R
C
C
C
I
C
C
= 40A
= 20A
= 1 0A
C
= 40A
= 1 0A
= 20A
1 25
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
50
1 1 00
G
1 50
60
1 300
0.1
1
1 5
1 2
Fig. 12. Maximum Transient Thermal Resistance
1 4
1 2
1 0
9
6
3
0
8
6
4
2
1
1 0
0
V
I
I
T
V
V
C
G
Fig. 8. Dependence of E
R
C E
1 0
J
G E
C E
= 20A
= 1 0mA
= 1 25ºC
G
1 5
= 600V
= 1 5V
= 960V
= 56 Ohms
Fig. 10. Gate Charge
Pulse Width - milliseconds
20
Q
G
20
1 0
I
30
- nanoCoulombs
C
- Amperes
25
40
IXGH 20N120BD1
IXGT 20N120BD1
R
50
G
30
= 5 Ohms
1 00
off
60
on I
35
C
70
6,534,343
40
80
1 000