IXGT60N60C3D1 IXYS, IXGT60N60C3D1 Datasheet

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IXGT60N60C3D1

Manufacturer Part Number
IXGT60N60C3D1
Description
IGBT 75A 600V TO-268
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGT60N60C3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
380W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
60
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
50
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.8
Rthjc, Max, Igbt, (°c/w)
0.33
If, Tj=110°c, Diode, (a)
26
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
with Diode
High Speed PT IGBTs for
40-100kHz switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
V
Clamped Inductive Load
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268
T
Test Conditions
I
V
V
I
TM
TO-247
C
C
J
J
C
C
C
C
C
C
C
GE
CE
CE
= 25°C, (Limited by Leads)
= 25°C to 150°C
= 25°C to 150°C, R
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, T
= 25°C
= 250µA, V
= V
= 0V, V
= 40A, V
600V IGBTs
CES,
V
VJ
GE
GE
GE
= 125°C, R
= ±20V
= 0V
CE
= 15V
= V
GE
GE
= 1MΩ
G
= 3Ω
T
T
J
J
= 125°C
= 125°C
IXGH60N60C3D1
IXGT60N60C3D1
Min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
V
I
CE
CM
1.13/10
= 125
Typ.
2.2
1.7
V
400
380
150
300
260
600
600
±20
±30
300
40
CES
75
60
26
4
6
±100
Max.
2.5
Nm/lb.in.
5.5
50
1 mA
mJ
µA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
A
V
V
V
g
g
TO-247 (IXGH)
TO-268 (IXGT)
V
I
V
t
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi (typ)
Optimized for Low Switching Losses
Square RBSOA
High Avalanche Capability
Anti-Parallel Ultra Fast Diode
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
= 600V
= 60A
= 50ns
≤ ≤ ≤ ≤ ≤ 2.5V
E
G
E
C
Tab = Collector
C (Tab)
C (Tab)
= Collector
DS100009B(01/10)

Related parts for IXGT60N60C3D1

IXGT60N60C3D1 Summary of contents

Page 1

... I = 250µ GE(th CES CE CES 0V ±20V GES 40A 15V CE(sat © 2010 IXYS CORPORATION, All Rights Reserved IXGH60N60C3D1 IXGT60N60C3D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 300 40 400 = 3Ω 125 G CM ≤ CES 380 -55 ... +150 150 -55 ... +150 300 260 1.13/10 4 Characteristic Values Min ...

Page 2

... Min. Typ. T =150°C 1 100° =100°C 100 30V R (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH60N60C3D1 IXGT60N60C3D1 TO-268 (IXGT) Outline Max Terminals Gate 3 - Emitter mJ 110 0.33 °C/W °C/W TO-247 (IXGH) Outline Max ...

Page 3

... GE 13V 11V 2.0 2.4 2.8 3.2 = 125º 15V GE 13V 11V 2.0 2.4 2.8 3 25º IXGH60N60C3D1 IXGT60N60C3D1 Fig. 2. Extended Output Characteristics @ T 300 V = 15V GE 13V 250 11V 200 150 9V 100 Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V GE 1.1 1.0 0.9 ...

Page 4

... C ies 100 80 C oes res 20 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH60N60C3D1 IXGT60N60C3D1 Fig. 8. Gate Charge V = 300V 40A NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º 3Ω < 10V / ns 150 ...

Page 5

... R = 3Ω 15V G GE 120 V = 480V CE 120 110 100 100 25º IXGH60N60C3D1 IXGT60N60C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V 125º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance d(off 125º ...

Page 6

... Degrees Centigrade J IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 110 50 100 80A 40A 80A 40A 105 115 125 IXGH60N60C3D1 IXGT60N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V 25ºC, 125º Amperes IXYS REF: G_60N60C3(6D)01-15-10-E ...

Page 7

... Fig. 22 Reverse recovery charge Q F versus -di / 100° 300V 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 25 Recovery time t rr 0.01 0.1 t IXGH60N60C3D1 IXGT60N60C3D1 100° 300V 60A 30A 15A A/µs 1000 0 200 400 /dt F Fig. 23 Peak reverse current I r versus - ...

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