STGW30NC60WD STMicroelectronics, STGW30NC60WD Datasheet - Page 5

• Manufacturer Part Number: STGW30NC60WD
• Description: MOSFET N-CH 60A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5204-5; STGW30NC60WD

STGW30NC60WD
Table 6.
Table 7.
1. Eon is the tun-on losses when a typical diode is used in the test circuit in
Symbol
(di/dt)
(di/dt)
Symbol
t
t
E
E
t
t
t
t
r
r
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C). Eon include diode recovery energy.
d
d
d(on)
d(on)
(V
(V
E
E
E
E
on
on
(
(
t
t
t
t
off
off
off
off
r
r
f
f
ts
ts
off
off
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
V
R
(see Figure 19)
V
R
T
V
R
(see Figure 17)
V
R
T
V
R
(see Figure 17)
V
R
T
(see Figure 17)
C
CC
CC
C
C
G
G
CC
CC
CC
CC
G
G
GE
GE
= 125°C
= 125 °C
= 125 °C
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 10 Ω , V
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 390 V, I
= 10 Ω , V
= 10 Ω , V
Test conditions
Test conditions
(see Figure 19)
GE
GE
GE
GE
(see Figure 17)
GE
C
C
GE
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 20 A
= 20 A
= 20 A
= 20 A
= 20 A,
= 20 A,
=15 V,
= 15 V
Figure
Electrical characteristics
Min.
Min.
19. If the IGBT is offered
1640
1600
Typ.
29.5
13.5
19.5
Typ.
118
151
305
181
486
455
355
810
12
29
27
46
38
Max.
Max.
A/µs
A/µs
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
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