IXEH25N120 IXYS, IXEH25N120 Datasheet

IGBT NPT3 SGL 1200V 36A TO-247AD

IXEH25N120

Manufacturer Part Number
IXEH25N120
Description
IGBT NPT3 SGL 1200V 36A TO-247AD
Manufacturer
IXYS
Datasheet
1.IXEH25N120.pdf (4 pages)

Specifications of IXEH25N120

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 25A
Current - Collector (ic) (max)
36A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXEH25N120
Manufacturer:
ON
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IXEH25N120D1
Manufacturer:
IXYS
Quantity:
18 000
NPT
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
© 2005 IXYS All rights reserved
IGBT
C25
C90
CM
CES
GES
d(off)
SC
d(on)
r
f
GES
CEK
tot
CE(sat)
GE(th)
on
off
CES
ies
Gon
thJC
3
IGBT
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 25 A; V
= 0.6 mA; V
= 25°C
= 90°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600 V; V
= 900V; V
= V
= 0 V; V
= 25 V; V
= ± 15 V; R
CE
GE
CES
= 600 V; I
= ± 15 V; R
; V
GE
GE
GE
GE
GE
= 15 V; T
GE
GE
= ± 20 V
G
= 0 V; T
= 0 V; f = 1 MHz
= ± 15 V; R
= V
= 68 Ω; T
= 15 V; I
C
G
= 20 A
CE
= 68 Ω
VJ
T
T
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
= 125°C
VJ
= 20 A
G
= 125°C
= 68 Ω; T
(T
G
IXEH 25N120
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
C
E
min.
4.5
Characteristic Values
Maximum Ratings
IXEH 25N120D1
205
105
320
175
100
typ.
G
2.6
3.2
0.2
4.1
1.5
1.2
1200
± 20
V
200
CES
36
24
10
60
max.
0.63 K/W
200
0.2 mA
3.2
6.5
C
E
mA
µs
mJ
mJ
nC
W
nA
nF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
TO-247 AD
Features
• NPT
• optional HiPerFRED
• TO-247 package
Applications
• AC drives
• DC drives and choppers
• Uninteruptible power supplies (UPS)
• switched-mode and resonant-mode
• inductive heating, cookers
I
V
V
- positive temperature coefficient of
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- industry standard outline
- epoxy meets UL 94V-0
power supplies
C25
G
saturation voltage for easy paralleling
performance in resonant circuits
CES
CE(sat) typ
C
E
3
IGBT
IXEH 25N120
IXEH 25N120D1
= 36 A
= 1200 V
= 2.6 V
TM
diode
C (TAB)
1 - 4

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IXEH25N120 Summary of contents

Page 1

... Ω ± off MHz ies 600 Gon thJC © 2005 IXYS All rights reserved IXEH 25N120 IXEH 25N120D1 Maximum Ratings 1200 ± 125° CES = 68 Ω 125° 200 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2.6 ...

Page 2

... Component Symbol Conditions stg M mounting torque d Symbol Conditions R with heatsink compound thCH Weight TO-247 AD Outline © 2005 IXYS All rights reserved Maximum Ratings 31 19 Characteristic Values min. typ. max. 2.7 3.2 2.1 = 125° 130 1.6 K/W Maximum Ratings -55...+150 -55 ...

Page 3

... 25° Fig. 1 Typ. output characteristics 25° Fig. 3 Typ. transfer characteristics 600 Fig. 5 Typ. turn on gate charge © 2005 IXYS All rights reserved 125° 100 IXEH 25N120 IXEH 25N120D1 125° Fig. 2 Typ. output characteristics 125° Fig. 4 Typ. forward characteristics of ...

Page 4

... Fig. 9 Typ. turn on energy vs gate resistor Ω 125° 200 400 600 800 1000 1200 Fig. 11 Reverse biased safe operating area RBSOA © 2005 IXYS All rights reserved 250 4.0 t d(on) ns 3.5 mJ 200 t 3 off t 2.5 150 2.0 100 1.5 1.0 50 ...

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