STGW30NC60VD STMicroelectronics, STGW30NC60VD Datasheet - Page 4

• Manufacturer Part Number: STGW30NC60VD
• Description: IGBT N-CH FAST 80A 600V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r
• Type: Very Fastr

Specifications of STGW30NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 80A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Capacitance, Gate: 2200 pF
• Current, Collector: 80 A
• Energy Rating: 550 μJ
• Package Type: TO-247
• Polarity: N-Channel
• Power Dissipation: 250 W
• Resistance, Thermal, Junction To Case: 0.48 °C/W
• Speed, Switching: 50 kHz
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 1.8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 497-5969-5

STGW30NC60VD
Table 5.
Table 6.
1. Eon is the turn-on losses when a typical diode is used in the test circuit in
Table 7.
Symbol
(di/dt)
(di/dt)
Symbol
Symbol
t
t
E
E
t
t
t
t
r(Voff)
r(Voff)
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
d(on)
d(on)
d(off)
d(off)
E
E
on
on
E
E
I
I
Q
Q
t
t
t
t
rrm
rrm
V
t
t
r
r
f
f
off
off
rr
rr
ts
ts
rr
rr
f
(1)
(1)
onf
on
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
If = 10A
If = 10A, Tj = 125°C
If = 20A, V
T
(see Figure 19)
If = 20A, V
T
di/dt =100A/µs
(see Figure 19)
V
R
Tj= 25°C
V
R
Tj= 125°C
(see Figure 18)
V
R
Tj=25°C
V
R
Tj=125°C
V
R
Tj=25°C
V
R
Tj=125°C
j
j
CC
CC
CC
CC
CC
CC
G
G
G
G
G
G
= 25°C, di/dt =100A/µs
= 125°C,
=3.3Ω, V
=3.3Ω, V
=3.3Ω, V
=3.3Ω, V
=3.3Ω, V
=3.3Ω, V
=390 V, I
=390 V, I
=390 V, I
=390 V, I
=390 V, I
=390 V, I
Test conditions
Test conditions
Test conditions
(see Figure 16)
(see Figure 16)
(see Figure 18)
(see Figure 16)
(see Figure 16)
R
R
GE
GE
= 40V,
= 40V,
GE
GE
GE
GE
C
C
C
C
C
C
= 20A,
= 20A,
= 20A,
= 20A,
= 20A,
= 20A,
=15V,
=15V,
=15V
=15V
=15V
=15V
Figure
Electrical characteristics
Min.
Min
Min
18. Eon include diode
1220
1600
1500
Typ.
Typ.
Typ.
11.5
237
220
330
550
450
770
100
150
130
1.3
5.4
44
66
88
31
11
31
28
75
66
1
3
Max.
Max
Max
300
450
750
2.0
A/µs
A/µs
Unit
Unit
Unit
nC
nC
µJ
µJ
µJ
µJ
µJ
µJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
A
A
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