IXGT30N60B IXYS, IXGT30N60B Datasheet
IXGT30N60B
Manufacturer Part Number
IXGT30N60B
Description
IGBT 60A 600V TO-268
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGH30N60B.pdf
(2 pages)
Specifications of IXGT30N60B
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
200W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
60A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268AA
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
3
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
© 2000 IXYS All rights reserved
HiPerFAST
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
Symbol
BV
V
I
I
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C110
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
T
Mounting torque (M3)
Test Conditions
I
BV
I
V
V
V
V
I
I
C
C
C
C
C
C
C
C
J
J
GE
GE(th)
CE
GE
CE
CES
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 mA, V
= 250 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
= I
temperature coefficient
temperature coefficient
C110
C110
, V
, V
TM
GE
VJ
CES
GE
GE
= 125°C, R
= ±20 V
= 15 V
= 15 V
GE
CE
IGBT
= 0 V
= V
GE
GE
= 1 MW
G
= 33 W
T
T
T
J
J
J
(T
= 25°C
= 150°C
= 150°C
J
= 25°C, unless otherwise specified)
min.
600
2.5
IXGH30N60B
IXGT30N60B
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
-0.286
0.072
typ.
I
1.13/10 Nm/lb.in.
CM
= 60
600
600
±20
±30
120
200
150
300
60
30
CES
max.
±100
6
200
1.8
2.0
5
1
%/K
%/K
mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
G = Gate,
E = Emitter,
Features
• International standard packages
• High current handling capability
• Latest generation HDMOS
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
Advantages
• Space savings (two devices in one
• High power density
• Suitable for surface mounting
• Switching speed for high frequency
• Easy to mount with 1 screw,TO-247
TO-247 AD
(IXGH)
TO-268 (D3)
(IXGT)
JEDEC TO-268 surface
mountable and JEDEC TO-247 AD
- drive simplicity
power supplies
package)
applications
(isolated mounting screw hole)
V
I
V
t
C25
fi
CES
CE(sat)
G
C
G
E
C = Collector,
TAB = Collector
E
= 600 V
=
= 1.8 V
= 100 ns
97516D (7/00)
TM
60 A
process
C (TAB)
(TAB)
1 - 2
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IXGT30N60B Summary of contents
Page 1
... GES CE(sat) C C110 CE(sat) C C110 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH30N60B IXGT30N60B Maximum Ratings 600 = 1 MW 600 GE ±20 ± 120 = 0.8 V CES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. Characteristic Values (T = 25° ...
Page 2
... L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGT30N60B TO-247 AD (IXGH) Outline 150 Dim. Millimeter Min. Max. Min 19.81 20.32 0.780 0.800 ...