IXEH25N120D1 IXYS, IXEH25N120D1 Datasheet - Page 3

• Manufacturer Part Number: IXEH25N120D1
• Description: IGBT NPT3 SGL 1200V 36A TO-247AD
• Manufacturer: IXYS

Specifications of IXEH25N120D1

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 36A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 36
• Ic90, Tc=90°c, Igbt, (a): 24
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.2
• Tfi, Typ, Igbt, (ns): 175
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.5
• Rthjc, Max, Igbt, (°c/w): 0.63
• If, Tc=90°c, Diode, (a): 19
• Rthjc, Max, Diode, (k/w): 1.6
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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I
I
V
C
C
GE
80
60
40
20
80
60
40
20
15
12
A
A
V
0
0
9
6
3
0
0
0
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
V
CE
T
VJ
= 20 V
= 25°C
1
20
5
V
I
C
2
CE
T
= 600 V
= 20 A
VJ
40
= 25°C
10
3
60
V
V
CE
4
GE
T
V
15
Q
VJ
GE
G
= 125°C
80
= 17 V
5
V
nC
15 V
13 V
11 V
V
9 V
100
20
6
I
I
C
RM
I
60
50
40
30
20
10
40
30
20
10
A
F
A
0
0
50
40
30
20
10
0
0
A
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
0
I
0
RM
T
VJ
= 125°C
1
200
free wheeling diode
free wheeling diode
1
2
T
VJ
400
= 125°C
3
T
V
I
F
IXEH 25N120
IXEH 25N120D1
VJ
R
2
= 15 A
= 600 V
= 125°C
600
V
-di/dt
GE
4
V
V
CE
= 17 V
F
800
T
A/µs
3
VJ
5
= 25°C
15 V
FII30-12E
13 V
11 V
V
V
9 V
1000
t
rr
6
200
150
100
50
0
ns
4
3 - 4
t
rr