IXGX50N60C2D1 IXYS, IXGX50N60C2D1 Datasheet - Page 2

IGBT 600V 75A FRD TO-247

IXGX50N60C2D1

Manufacturer Part Number
IXGX50N60C2D1
Description
IGBT 600V 75A FRD TO-247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet

Specifications of IXGX50N60C2D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
480W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
PLUS 247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
48
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.74
Rthjc, Max, Igbt, (°c/w)
0.31
If, Tj=110°c, Diode, (a)
50
Rthjc, Max, Diode, (ºc/w)
0.85
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGX50N60C2D1
Manufacturer:
ST
Quantity:
2 000
IXYS reserves the right to change limits, test conditions, and dimensions.
Reverse Diode (FRED)
Symbol
V
I
t
R
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
RM
rr
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
F
thJC
fs
off
on
off
thJC
thCK
ies
oes
res
g
ge
gc
Inductive load, T
I
V
C
I
Note 1
V
I
Inductive load, T
I
V
Test Conditions
I
Note 1
I
V
I
C
C
Test Conditions
CE
C
= 40 A, V
F
F
F
CE
CE
= 40 A, V
R
= 40 A, V
= 60 A, V
= 60 A, V
= 1 A; -di/dt = 200 A/ms; V
= 480 V, R
= 100 V
= 40 A; V
= 25 V, V
= 480 V, R
GE
GE
GE
GE
GE
= 15 V
GE
CE
G
= 15 V, V
= 0 V,
= 15 V
= 0 V, -di
G
= 10 V,
= 0 V, f = 1 MHz
= R
J
= R
= 25° ° ° ° ° C
J
off
= 125° ° ° ° ° C
off
= 2.0 Ω
= 2.0 Ω
CE
F
/dt = 100 A/µ T
= 0.5 V
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
R
(T
(T
= 30 V
J
J
CES
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
T
J
J
= 150°C
= 100°C
min.
Min.
Characteristic Values
Characteristic Values
40
typ.
Typ.
3700
35
0.38
0.74
0.15
290
138
115 150
170
1.4
51
50
25
40
18
25
48
18
25
60
max.
0.65 K/W
Max.
0.31 K/W
2.1
1.4
8.3
0.7 mJ
K/W
n s
mJ
mJ
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
V
A
S
PLUS247 Outline
TO-264 AA Outline
Terminals:
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
1
2
20.80
15.75
19.81
IXGK 50N60C2D1
IXGX 50N60C2D1
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
25.91
19.81
20.32
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
5.45 BSC
Millimeter
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
5.46 BSC
21.34
16.13
20.32
26.16
19.96
20.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
6,534,343
Min.
1.020
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.215 BSC
Inches
.215 BSC
Inches
Max.
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
1.030
6,583,505
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072

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