IXGK50N60A2U1 IXYS, IXGK50N60A2U1 Datasheet - Page 5

• Manufacturer Part Number: IXGK50N60A2U1
• Description: IGBT 75A 600V TO-264AA
• Manufacturer: IXYS

Specifications of IXGK50N60A2U1

• Voltage - Collector Emitter Breakdown (max): 600V
• Current - Collector (ic) (max): 75A
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 75 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): -
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): -
• Tfi, Typ, Tj=25°c, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (°c/w): -
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Igbt Type: -
• Vce(on) (max) @ Vge, Ic: -
• Lead Free Status / Rohs Status: Details

© 2005 IXYS All rights reserved
10000
1000
1000
900
800
700
600
500
400
300
200
100
0.01
10
0.1
1
25
0
0.1
t
t
R
V
V
d(off)
fi
GE
CE
Sw itching Tim e on Tem perature
G
35
Fig. 13. Dependence of Turn-off
f = 1 MHz
- - - - - -
= 5Ω
5
= 15V
= 400V
45
I
C
Fig. 15. Capacitance
T
= 1 0 0A
10
J
55
- Degrees Centigrade
I
15
C
V
65
C E
= 25A
100A
50A
75
20
- Volts
I
C
85
Fig. 17. Maxim um Transient Therm al Resistance
25
1
= 50A
25A
95
30
C
C
C
105 115 125
ies
oes
res
35
Pulse Width - milliseconds
40
10
160
140
120
100
13.5
10.5
80
60
40
20
7.5
4.5
1.5
0
15
12
100 150 200 250 300 350 400 450 500 550 600
9
6
3
0
0
T
R
dV/dT < 10V/ns
V
I
I
J
Fig. 16. Reverse-Bias Safe
G
C
G
CE
= 125
20
= 50A
= 1 0mA
= 10Ω
= 300V
Fig. 14. Gate Charge
º
Operating Area
C
40
Q
G
V
- nanoCoulombs
100
C E
60
IXGK 50N60A2U1
IXGX 50N60A2U1
- Volts
80
100
120
1000
140