IXGT16N170A IXYS, IXGT16N170A Datasheet
IXGT16N170A
Specifications of IXGT16N170A
Related parts for IXGT16N170A
IXGT16N170A Summary of contents
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... 0.8 • V CES CE CES Note 125°C 16N170A J = ± GES CE(sat) C C90 GE © 2005 IXYS All rights reserved IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± 10Ω 0 22Ω 190 -55 ... +150 150 -55 ... +150 TO-247 1 ...
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... Pulse test, t ≤ 300 μs, duty cycle ≤ Switching times may increase for V increased IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° ...
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... GE 14 13V 11V Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 16A Volts G E © 2005 IXYS All rights reserved º C 100 13V 11V º C 1.8 1.7 1.6 1.5 7V 1.4 1.3 6V 1.2 1.1 1.0 0.9 0.8 5V 0.7 0 º IXGH/IXGT 16N170A IXGH/IXGT 16N170AH1 Fig ...
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... T = 125ºC J 700 V = 15V GE 600 V = 850V CE 500 400 300 200 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions 2.75 2.50 2.25 º 125 C J 2.00 1.75 1.50 1.25 º 1.00 0.75 0. 250 225 ...
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... C 125 100 Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 C res Volts 0.1 1 © 2005 IXYS All rights reserved 32A 85 95 105 115 125 ies oes Fig. 17. Maxim um Transient Therm al Resistance 1 0 Pulse Width - milliseconds IXGH/IXGT 16N170A IXGH/IXGT 16N170AH1 Fig. 14. Gate Charge ...
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... IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. ...