IXGH40N120A2 IXYS, IXGH40N120A2 Datasheet - Page 5

• Manufacturer Part Number: IXGH40N120A2
• Description: IGBT 1200V 75A TO-247
• Manufacturer: IXYS

Specifications of IXGH40N120A2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 360W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 800
• Eoff, Typ, Tj=125°c, Igbt, (mj): 35
• Rthjc, Max, Igbt, (°c/w): 0.35
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10,000
1,000
1.00
0.10
0.01
110
100
100
90
80
70
60
50
40
30
20
10
10
0.0001
Fig. 13. Inductive Turn-on Switching Times vs.
25
0
f = 1 MHz
35
5
45
T
Junction Temperature
J
10
- Degrees Centigrade
55
Fig. 15. Capacitance
I
I
I
C
C
C
65
15
= 40A
= 20A
= 80A
V
0.001
CE
75
- Volts
20
t
R
V
r
G
CE
85
= 2
= 960V
Ω
25
95
, V
Fig. 17. Maximum Transient Thermal Resistance
t
GE
d(on)
C ies
C oes
C res
105
30
= 15V
- - - -
115
35
0.01
125
Pulse Width - Seconds
25
24
23
22
21
20
19
18
17
16
15
40
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
Fig. 16. Reverse-Bias Safe Operating Area
T
R
dV / dT < 10V / ns
V
I
I
0.1
300
C
G
J
G
CE
= 125ºC
= 40A
= 10 mA
= 5 Ω
20
= 600V
400
40
500
Fig. 14. Gate Charge
Q
G
600
V
- NanoCoulombs
CE
60
- Volts
700
1
IXGH 40N120A2
80
IXGT 40N120A2
800
900
100
1000 1100 1200
120
10
140