IXST30N60CD1 IXYS, IXST30N60CD1 Datasheet
IXST30N60CD1
Manufacturer Part Number
IXST30N60CD1
Description
IGBT 600V FRD SCSOA TO-268
Manufacturer
IXYS
Datasheet
1.IXST30N60CD1.pdf
(2 pages)
Specifications of IXST30N60CD1
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 30A
Current - Collector (ic) (max)
55A
Power - Max
200W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
55A
Gate To Emitter Voltage (max)
±20V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
55
Ic90, Tc=90°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.7
Rthjc, Max, Igbt, (k/w)
0.62
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXST30N60CD1
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
SC
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, V
V
R
T
Mounting torque
Test Conditions
I
I
V
V
V
V
C
C
C
C
C
C
J
J
GE
GE
CE
GE
CE
GE
G
= 33 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
= 15 V
= 750 mA, V
= 2.5 mA, V
= 0.8 • V
= 0 V
= 0 V, V
GE
J
CE
CES
= 125°C, R
= 360 V, T
= ±20 V
GE
CE
= 0 V
= V
GE
GE
G
= 1 MW
J
CL
= 10 W
= 125°C
= 0.8 V
T
T
I
C
J
J
= I
(T
= 25°C
= 125°C
J
C90
= 25°C, unless otherwise specified)
CES
IXSH 30 N60CD1
IXSK 30 N60CD1
IXST 30 N60CD1
min.
600
Characteristic Values
4
-55 ... +150
-55 ... +150
Maximum Ratings
I
typ.
1.13/10 Nm/lb.in.
CM
= 60
600
600
±20
±30
110
200
150
300
10
55
30
6
max.
±100
200
2.5
7
3
mA
mA
nA
ms
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
t
TO-247AD
(IXSH)
TO-268 (D3)
(IXST)
TO-264
(IXSK)
G = Gate
E = Emitter
Features
• International standard packages:
• Short Circuit SOA capability
• High freqeuncy IGBT and anti-
• New generation HDMOS
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Space savings (two devices in one
• Easy to mount with 1 screw
• Surface mountable, high power case
• Reduces assembly time and cost
• High power density
C25
fi
JEDEC TO-247, TO-264& TO-268
parallel FRED in one package
package)
power supplies
(isolated mounting screw hole)
style
CES
CE(sat)
G
C
G
E
C
=
=
=
=
G
E
C = Collector
TAB = Collector
E
600 V
70 ns
2.5 V
55 A
TM
98518A (7/00)
process
C
1 - 2
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IXST30N60CD1 Summary of contents
Page 1
... GE(th 0.8 • V CES CE CES ± GES CE(sat) GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 110 = 0 CES = 125°C ...
Page 2
... A; -di/dt = 100 A/ms thJC Notes: 1. Switching times may increase for V 2. Pulse test, t £ 300 ms, duty cycle d £ TO-268AA (IXST) (D PAK) © 2000 IXYS All rights reserved IXSH30N60CD1 IXSK30N60CD1 IXST30N60CD1 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 10 3100 240 ...