IXST30N60BD1 IXYS, IXST30N60BD1 Datasheet
IXST30N60BD1
Specifications of IXST30N60BD1
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IXST30N60BD1 Summary of contents
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... GE(th 0.8 • V CES CE CES ± GES CE(sat) GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 110 = 0 CES = 125°C ...
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... L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 TO-247 AD (IXSH) Outline Dim. Millimeter Min. Max ...
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... J 100 Volts CE Fig.5 Input Admittance 140 V = 10V CE 120 100 125° 25° Volts GE © 2000 IXYS All rights reserved IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 13V 11V =15V 13V 11V Fig.2 Output Characterstics 200 V = 15V T = 25° 13V 160 120 Volts CE Fig ...
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... Fig.11 Transient Thermal Resistance 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Fig.8 Dependence of Turn-Off Energy 7.5 2.0 1.5 5.0 1.0 2.5 0.5 0.0 0 Fig ...
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... T VJ Fig. 15 Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.00001 0.0001 0.001 Fig. 18 Transient thermal resistance junction to case © 2000 IXYS All rights reserved IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 1000 T = 100° 300V R 800 I = 60A 30A 15A F ...