IXGT25N160 IXYS, IXGT25N160 Datasheet
Home Discrete Semiconductor Products IGBTs - Single IXGT25N160
Manufacturer Part Number
IXGT25N160
Description
IGBT 1600V 75A TO-268
Specifications of IXGT25N160
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1600V
Vce(on) (max) @ Vge, Ic
4.7V @ 20V, 100A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
1600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
35
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
20
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Voltage IGBT
For Capacitor Discharge
Applications
Preliminary Data Sheet
Symbol
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
© 2005 IXYS All rights reserved
CES
GES
C25
C110
CM
J
JM
stg
GE(th)
CE(sat)
CES
CGR
GES
GEM
C
d
CES
Test Conditions
I
I
V
V
V
I
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (TO-247)
C
C
C
C
CE
GE
CE
J
J
C
C
C
C
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 110°C
= 25°C, V
= 15 V, T
= 25°C
= 250 μA, V
= 250 μA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
= 100 A, V
C110
, V
GE
VJ
GE
CES
GE
= 125°C, R
= ±30 V
GE
= 15 V
= 20 V, 1 ms
GE
CE
= 20 V
= 0 V
= V
GE
GE
= 1 MΩ
G
= 20 Ω
T
J
(T
= 125°C
J
= 25°C unless otherwise specified)
IXGH 25N160
IXGT 25N160
TO-247
TO-268
1600
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
CM
typ.
1.13/10 Nm/lb-in
= 100
1600
1600
± 20
± 30
300
260
200
300
150
75
25
CES
6
4
max.
±100
5.0
2.5
4.7
50
1
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
g
g
TO-247 (IXGH)
TO-268 (IXGT)
G = Gate,
E = Emitter,
V
I
V
Features
Applications
Advantages
C25
flammability classification
(isolated mounting screw hole)
CES
CE(sat)
High peak current capability
Low saturation voltage
MOS Gate turn-on
Rugged NPT structure
International standard packages
Molding epoxies meet UL 94 V-0
Capacitor discharge
Pulser circuits
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
-drive simplicity
- JEDEC TO-268 and
- JEDEC TO-247 AD
G
C
G
= 1600 V
=
=
E
C = Collector,
TAB = Collector
E
2.5 V
75 A
DS99381(12/05)
C (TAB)
C (TAB)
Related parts for IXGT25N160
IXGT25N160 Summary of contents
... V CES CE CES ±30 V GES CE(sat) C C110 100 © 2005 IXYS All rights reserved IXGH 25N160 IXGT 25N160 Maximum Ratings 1600 = 1 MΩ 1600 GE ± 20 ± 200 = 20 Ω 100 0.8 V CES 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb-in TO-247 ...
... Ixys reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. ...
... V - Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 150A C 100A 7 50A Volts GE © 2005 IXYS All rights reserved 275 V = 25V GE 250 20V 225 200 175 15V 150 125 10V 100 2.1 = 25V 20V 1.9 1.7 15V 1.5 1.3 10V 1.1 0.9 0.7 0.5 ...
... CE 500 I = 100A, 150A C 400 300 200 100 Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. 480 440 400 360 320 280 240 200 160 120 140 160 180 200 25 Fig. 10. Resistive Turn-On Switching Times 700 t 650 ...
... T = 125º Ω < 10V / 200 400 600 800 1000 V - Volts CE 1.00 0.10 0.01 0.0001 0.001 © 2005 IXYS All rights reserved 450 16 400 14 350 12 300 10 250 8 200 6 150 4 = 150A, 100A 100 10,000 1,000 100 10 1200 1400 1600 Fig. 17. Maximum Transient Thermal Resistance ...
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