IXDH30N120 IXYS, IXDH30N120 Datasheet - Page 4

IGBT NPT 1200V 60A TO-247AD

IXDH30N120

Manufacturer Part Number
IXDH30N120
Description
IGBT NPT 1200V 60A TO-247AD
Manufacturer
IXYS
Datasheet

Specifications of IXDH30N120

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.9V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
38
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.9
Tfi, Typ, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
3.4
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXDH30N120
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXDH30N120D1
Manufacturer:
IXYS
Quantity:
2 000
Part Number:
IXDH30N120D1
Manufacturer:
SANKEN
Quantity:
7 000
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
E
E
I
CM
on
on
14
12
mJ
10
60
50
40
30
20
10
12
mJ
10
A
8
6
4
2
0
8
6
4
2
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
= 125°C
t
= 25A
= 600V
200
E
= ±15V
d(on)
on
40
t
10
r
times versus collector current
times versus gate resistor
RBSOA
400
80
20
R
T
V
J
CEK
G
600
= 125°C
= 47Ω
< V
120
CES
30
800 1000 1200
160
R
I
G
C
40
V
V
R
T
J
200
V
CE
GE
G
CE
= 125°C
= 47Ω
= 600V
= ±15V
E
t
50
d(on)
on
V
A
t
240
r
140
120
100
80
60
40
20
0
240
180
120
60
0
ns
ns
t
t
E
Z
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
0.00001 0.0001
mJ
mJ
10
6
5
4
3
2
1
0
5
4
3
2
1
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
J
CE
GE
= 125°C
= 25A
= 600V
= ±15V
40
10
times versus collector current
times versus gate resistor
single pulse
80
20
0.001
120
30
IXDH 30N120
IXDH 30N120 D1
0.01
R
160
G
I
C
t
40
d(off)
t
V
V
R
T
0.1
J
CE
GE
G
200
= 125°C
= 47Ω
= 600V
= ±15V
IXDH30N120
E
50
off
IGBT
diode
t
E
s
d(off)
t
off
f
A
t
240
f
1
600
500
400
300
200
100
0
ns
1500
1200
900
600
300
0
ns
4 - 4
t
t

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