IXSH45N100 IXYS, IXSH45N100 Datasheet - Page 4

• Manufacturer Part Number: IXSH45N100
• Description: IGBT 1000V SCSOA TO-247
• Manufacturer: IXYS

Specifications of IXSH45N100

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 45A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Igbt, (ns): 1000
• Eoff, Typ, Tj=125°c, Igbt, (mj): 15
• Rthjc, Max, Igbt, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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0.001
3000
2750
2500
2250
2000
1750
1500
0.01
0.1
0.00001
15
12
9
6
3
0
1
0
0
D=0.02
D=0.1
D=0.05
Fig.11 Transient Thermal Impedance
D=0.2
D=0.01
Single Pulse
Fig.7 Turn-Off Energy per Pulse and
D=0.5
Fig.9 Gate Charge Characteristic Curve
I
V
C
CE
= 45A
= 500V
T
R
J
G
= 125°C
20
= 10
Fall Time on Collector Current
50
W
Q
g
- nanocoulombs
0.0001
I
40
C
- Amperes
100
60
150
E
off
80
0.001
t
fi
200
100
D = Duty Cycle
60
50
40
30
20
10
0
Pulse Width - seconds
0.01
2600
2400
2200
2000
1800
0.01
100
0.1
10
1
0
0
IXSH 45N100
Fig.8
Fig.10 Turn-Off Safe Operating Area
T
I
0.1
C
J
= 45A
= 125°C
200
10
Dependence of Turn-Off Energy
Per Pulse and Fall Time on R
E
t
fi
off
T
R
dV/dt < 6V/ns
J
G
400
= 125°C
20
= 2.7
R
V
G
CE
- Ohms
W
- Volts
1
600
30
IXSM 45N100
800
40
1000
10
50
G
40
35
30
25
20
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