IXGT35N120B IXYS, IXGT35N120B Datasheet
IXGT35N120B
Manufacturer Part Number
IXGT35N120B
Description
IGBT 70A 1200V TO-268
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGH35N120B.pdf
(2 pages)
Specifications of IXGT35N120B
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.3V @ 15V, 35A
Current - Collector (ic) (max)
70A
Power - Max
300W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
35
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
160
Eoff, Typ, Tj=125°c, Igbt, (mj)
8
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
BV
V
I
I
V
© 2000 IXYS All rights reserved
HiPerFAST
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
IXYS reserves the right to change limits, test conditions, and dimensions.
CES
GES
C25
C90
CM
J
JM
stg
GE(th)
CE(sat)
CGR
C
CES
GES
GEM
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (M3)
C
C
C
C
C
C
C
J
J
CE
GE
CE
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 1 mA, V
= 750 mA, V
= V
= 0 V
= 0 V, V
= I
C90
CES
, V
TM
GE
GE
VJ
GE
= 15 V
= 125°C, R
= ±20 V
CE
IGBT
= 0 V
= V
GE
GE
= 1 MW
G
= 5 W
T
T
T
J
J
J
(T
= 25°C
= 125°C
= 125°C
Advance Technical Information
J
= 25°C, unless otherwise specified)
IXGH 35N120B
IXGT 35N120B
TO-247 AD
TO-268
1200
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
2.7
I
1.13/10 Nm/lb.in.
CM
1200
1200
= 90
±20
±30
140
300
260
300
150
70
35
CES
max.
±100
6
4
250
3.3
5
5
mA
mA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
g
g
V
I
V
t
TO-268
(IXGT)
TO-247 AD (IXGH)
Features
• International standard packages
• Low switching losses, low V
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
G = Gate,
E = Emitter,
C2
fi(typ)
JEDEC TO-268 and
JEDEC TO-247 AD
- drive simplicity
power supplies
(isolated mounting screw hole)
CES
CE(sat)
G
= 1200 V
=
=
= 160 ns
C
G
E
C = Collector,
TAB = Collector
E
3.3 V
70 A
98665 (11/99)
(sat)
C (TAB)
C (TAB)
1 - 2
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IXGT35N120B Summary of contents
Page 1
... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved Advance Technical Information IXGH 35N120B IXGT 35N120B Maximum Ratings 1200 = 1 MW 1200 GE ±20 ± 140 = 0.8 V CES 300 -55 ...
Page 2
... CES 3 2 off 300 360 , CES 8.0 G 0.25 0.3 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 35N120B IXGT 35N120B TO-247 AD (IXGH) Outline Dim. Millimeter ns Min. Max. ...