IXGK35N120CD1 IXYS, IXGK35N120CD1 Datasheet
IXGK35N120CD1
Manufacturer Part Number
IXGK35N120CD1
Description
IGBT 1200V W/FAST DIODE PLUS247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGK35N120CD1.pdf
(2 pages)
Specifications of IXGK35N120CD1
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 35A
Current - Collector (ic) (max)
70A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264AA
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
35
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
160
Eoff, Typ, Tj=125°c, Igbt, (mj)
8
Rthjc, Max, Igbt, (°c/w)
0.35
If, Tj=110°c, Diode, (a)
35
Rthjc, Max, Diode, (ºc/w)
0.65
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
HiPerFAST
Symbol
BV
V
I
I
V
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
Weight
© 2002 IXYS All rights reserved
CM
CES
GES
C25
C90
J
JM
stg
GE(th)
CE(sat)
CGR
GES
GEM
C
CES
d
CES
Test Conditions
I
I
V
V
V
I
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (M3) (IXGK)
C
C
C
C
C
C
C
CE
GE
CE
J
J
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 1 mA, V
= 750 µA, V
= V
= 0 V
= 0 V, V
= I
C90
CES
, V
TM
GE
GE
VJ
GE
= 15 V
= ±20 V
= 125°C, R
CE
= 0 V
= V
IGBT
GE
GE
= 1 MΩ
G
= 5 Ω
T
T
T
(T
J
J
J
J
Preliminary Data Sheet
= 25°C
= 125°C
= 125°C
= 25°C, unless otherwise specified)
IXGK 35N120C
IXGX 35N120C
IXGK 35N120CD1
IXGX 35N120CD1
TO-264 AA
PLUS247
1200
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
typ.
3.2
TM
1.13/10Nm/lb.in.
I
CM
1200
1200
±20
±30
140
= 90
350
150
300
70
35
max.
CES
10
±100
6
250
4.0
5
5
mA
µA
nA
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
g
g
(D1)
TO-264 AA (IXGK)
PLUS 247
G = Gate,
E = Emitter,
Features
Applications
(UPS)
Advantages
International standard packages
JEDEC TO-264 and PLUS247
Low switching losses, low V
MOS Gate turn-on
- drive simplicity
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies
Switched-mode and resonant-mode
power supplies
High power density
Easy to mount with 1 screw,
(isolated mounting screw hole)
Spring clip or clamp assembly
possible.
V
I
V
t
C25
fi(typ)
G
G
CES
CE(sat)
C
C
E
E
TM
(IXGX)
=
= 1200 V
C = Collector,
TAB = Collector
=
=
115 ns
DS98961 (10/02)
4.0 V
70 A
C (TAB)
C (TAB)
(sat)
TM
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IXGK35N120CD1 Summary of contents
Page 1
... CES CE CES ± GES CE(sat) C C90 GE © 2002 IXYS All rights reserved Preliminary Data Sheet IXGK 35N120C IXGX 35N120C IXGK 35N120CD1 IXGX 35N120CD1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 140 = 5 Ω 0.8 V CES 350 -55 ... +150 150 -55 ... +150 300 1.13/10Nm/lb.in. ...
Page 2
... -di/dt = 200 A/µ thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXGK 35N120C IXGX 35N120C Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...