IXGH30N60BD1 IXYS, IXGH30N60BD1 Datasheet
IXGH30N60BD1
Specifications of IXGH30N60BD1
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IXGH30N60BD1 Summary of contents
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... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 30N60BD1 IXGT 30N60BD1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 120 = 0.8 V CES 200 -55 ... +150 150 -55 ...
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... J min. typ 150°C J /dt = 100 A/ =100°C 100 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXGH 30N60BD1 IXGT 30N60BD1 TO-247 AD (IXGH) Outline max Dim ...
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... Fig. 1. Saturation Voltage Characteristics Fig. 3. Saturation Voltage Characteristics Fig. 5. Admittance Curves © 2000 IXYS All rights reserved IXGH 30N60BD1 IXGT 30N60BD1 Fig. 2. Extended Output Characteristics Fig. 4. Temperature Dependence of V Fig. 6.Temperature Dependence of BV & V DSS GE(th) CE(sat ...
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... Fig. 7. Dependence of E OFF Fig. 9. Gate Charge Fig. 11. IGBT Transient Thermal Resistance © 2000 IXYS All rights reserved and Fig. 8. Dependence of E OFF C Fig. 10. Turn-off Safe Operating Area IXGH 30N60BD1 IXGT 30N60BD1 OFF ...
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... T =150° =100° =25°C VJ Fig. 12 Forward current I versus Fig. 15 Dynamic parameters versus T VJ Fig. 18 Transient thermal resistance junction to case © 2000 IXYS All rights reserved T = 100° 300V 60A 30A 15A F Fig. 13 Reverse recovery charge Q r versus -di / 100° 300V ...