FIO50-12BD IXYS, FIO50-12BD Datasheet
FIO50-12BD
Manufacturer Part Number
FIO50-12BD
Description
IC SWITCH BIDIR IGBT I4-PAC-5
Manufacturer
IXYS
Datasheet
1.FIO50-12BD.pdf
(4 pages)
Specifications of FIO50-12BD
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 30A
Current - Collector (ic) (max)
50A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
50A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS i4-Pac
Pin Count
5
Mounting
Through Hole
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vrrm, (v)
1200
Vvrms, (v)
1200
Irms, Per Phase, (a)
50
@ Tc, (°c)
2.6
@ Th, (°c)
2.2
Itsm, 10 Ms, Tvj = 45°c, (a)
0.6
Itsm, 8.33 Ms, Tvj = 45°c, (a)
48
Vt0, (v)
2.4
Rt, (mohms)
150
Rthjh, (k/w)
-
Tvjm, (°c)
1.3
Rthjc, Max, (k/w)
-
Package Style
ISOPLUS i4-PAC (5 - Lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FIO50-12BD
Manufacturer:
NEC
Quantity:
5 000
Bidirectional Switch
with NPT
and fast Diode Bridge
in ISOPLUS i4-PAC
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
IGBT
C25
C90
CM
CES
GES
d(off)
SC
d(on)
r
f
GES
CEK
tot
CE(sat)
GE(th)
on
off
CES
ies
Gon
thJC
thJS
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 30 A; V
= 1 mA; V
D-68623 Lampertheim
= 25°C
= 90°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600 V; V
= 900V; V
= V
= 25 V; V
= ± 15 V; R
= 0 V; V
CE
GE
3
CES
= 600 V; I
= ± 15 V; R
IGBT
; V
GE
GE
GE
GE
GE
GE
= 15 V; T
GE
= V
= ± 20 V
G
= 0 V; T
= 0 V; f = 1 MHz
= ± 15 V; R
= 39 Ω; T
= 15 V; I
C
TM
CE
G
= 30 A
= 39 Ω
VJ
T
T
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
VJ
= 125°C
= 35 A
G
= 125°C
= 39 Ω; T
(T
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
4.5
Characteristic Values
3
1
4
5
Maximum Ratings
440
150
typ.
2.0
2.3
0.4
4.6
2.2
1.2
85
50
50
1200
± 20
V
2
200
50
32
CES
10
50
max.
200
0.4 mA
2.6
6.5
0.6 K/W
K/W
mA
µs
mJ
mJ
nC
W
nA
nF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
I
V
V
Features
• NPT
• HiPerFRED
• ISOPLUS i4-PAC
Applications
switches to control bidirectional current
flow by a single control signal:
• matrix converters
• spare matrix converters
• AC controllers
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- fast reverse recovery
- low operating forward voltage
- low leakage current
- isolated back surface
- low coupling capacity between pins
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
CES
CE(sat) typ.
performance in resonant circuits
and heatsink
easy paralleling
1
3
IGBT
5
TM
FIO 50-12BD
= 50 A
= 1200 V
= 2.0 V
diodes
TM
package
1 - 4
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FIO50-12BD Summary of contents
Page 1
... off MHz ies 600 Gon thJC R thJS © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 200 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
Page 2
... Conditions C coupling capacity between shorted p pins and mounting tab in the case d ,d pin - pin pin - backside metal S A Weight © 2003 IXYS All rights reserved Equivalent Circuits for Simulation Maximum Ratings Conduction Characteristic Values IGBT (typ min. typ. max. 2.4 2.8 V Diode (typ ...
Page 3
... 100 Fig. 1 Typ. output characteristics 120 100 125° 25° Fig. 3 Typ. transfer characteristics 120 Fig. 5 Typ. turn on gate charge © 2003 IXYS All rights reserved 25° 600 0.0001 160 200 FIO 50-12BD 120 100 Fig. 2 Typ. output characteristics 125°C ...
Page 4
... Fig. 7 Typ. turn on energy and switching times versus collector current 600 ± 125° Fig. 9 Typ. turn on energy and switching times versus gate resistor © 2003 IXYS All rights reserved 100 off 600 ± Ω 125° Fig. 8 160 120 off ...