IXER60N120 IXYS, IXER60N120 Datasheet - Page 4

• Manufacturer Part Number: IXER60N120
• Description: IGBT NPT3 1200V 95A ISOPLUS247
• Manufacturer: IXYS

Specifications of IXER60N120

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 60A
• Current - Collector (ic) (max): 95A
• Power - Max: 375W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 95A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS 247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 95
• Ic90, Tc=90°c, Igbt, (a): 60
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Igbt, (ns): 30
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.8
• Rthjc, Max, Igbt, (°c/w): 0.33
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
E
E
I
CM
on
on
15.0
12.5
10.0
120
100
mJ
20
16
12
7.5
5.0
2.5
0.0
80
60
40
20
mJ
A
8
4
0
0
0
0
0
Fig. 5
Fig. 7
Fig. 9
R
T
V
V
I
T
VJ
G
C
VJ
CE
GE
E on
= 22 Ω
200
= 125°C
E on
= 600 V
= ±15 V
20
= 50 A
= 125°C
20
Typ. turn on energy and switching
times versus gate resistor
Reverse biased safe operating area
RBSOA
Typ. turn on energy and switching
times versus collector current
400
40
40
600
60
60
800 1000 1200 1400
R
V
V
R
T
80
80
VJ
CE
GE
I
G
G
C
= 22 Ω
= 600 V
= ±15 V
= 125°C
100
V
100
CE
t d(on)
t r
t r
t d(on)
A
Ω
120
120
100
90
80
70
60
50
40
30
20
10
0
ns
300
250
200
150
100
50
0
ns
V
t
t
E
E
Z
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
12
10
mJ
0.0001
8
6
4
2
0
8
6
4
2
0
1
0
Fig. 6 Typ. turn off energy and switching
Fig. 8 Typ. turn off energy and switching
Fig. 10 Typ. transient thermal impedance
E off
V
V
I
T
C
VJ
CE
GE
20
E off
= 600 V
= ±15 V
= 50 A
= 125°C
20
0.001
times versus collector current
times versus gate resistor
40
40
single pulse
0.01
60
60
IXER 60N120
0.1
R
V
V
R
T
80
VJ
CE
GE
G
G
80
I
C
= 600 V
= 22 Ω
= ±15 V
= 125°C
t
1
100
t d(off)
t f
100
IXER60N120
t d(off)
t f
Ω
s
120
A
10
800
600
400
200
0
ns
1200
1000
800
600
400
200
0
ns
4 - 4
t
t