IXGK120N60B IXYS, IXGK120N60B Datasheet - Page 5

• Manufacturer Part Number: IXGK120N60B
• Description: IGBT HI SPEED 600V 200A TO264AA
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGK120N60B

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 120A
• Current - Collector (ic) (max): 200A
• Power - Max: 660W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 200A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-264AA
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 200
• Ic90, Tc=90°c, Igbt, (a): 120
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.1
• Tfi, Typ, Tj=25°c, Igbt, (ns): 160
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.5
• Rthjc, Max, Igbt, (°c/w): 0.19
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100000
10000
350
300
250
200
150
100
1000
0.01
50
100
0.1
1
25
0
1
I
C
Sw itching Tim e on Tem perature
I
I
35
Fig. 13. De pende nce of Turn-off
C
C
= 100A
f = 1 MHz
= 50A
= 100A
5
50A
45
Fig. 15. Capacitance
T
J
10
55
- Degrees Centigrade
65
15
V
C E
75
20
- Volts
t
R
V
d(off)
C
CE
G
C
res
C
= 2.7Ω, V
85
oes
= 480V
Fig. 17. Maxim um Transient Therm al Resistance
ies
25
95
, t
30
GE
fi
105 115 125
10
- - - - -
= 15V
35
Pulse Width - milliseconds
40
220
200
180
160
140
120
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
100 150 200 250 300 350 400 450 500 550 600
0
V
I
I
C
G
T
R
dV/dT < 5V/ns
CE
J
= 1 00A
= 1 0mA
Fig. 16. Re vers e-Bias Safe
G
= 125
= 300V
= 2.7Ω
100
100
Fig. 14. Gate Charge
º
Ope rating Area
C
Q
G
V
200
- nanoCoulombs
C E
- Volts
IXGK 120N60B
IXGX 120N60B
300
400
1000
500