IXGT25N250 IXYS, IXGT25N250 Datasheet - Page 5

• Manufacturer Part Number: IXGT25N250
• Description: IGBT 2500V TO-268
• Manufacturer: IXYS

Specifications of IXGT25N250

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 2500V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 25A
• Current - Collector (ic) (max): 60A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic110, Tc=110°c, Igbt, (a): 25
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.90
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Rthjc, Max, Igbt, (k/w): 0.50
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
260
255
250
245
240
235
230
225
220
215
210
205
200
1.00
0.10
0.01
280
240
200
160
120
80
40
0
0.0001
250
4
Fig. 13. Resistive Turn-off Switching Times
t
T
V
Fig. 15. Reverse-Bias Safe Operating Area
T
R
dV / dT < 10V / ns
f
J
CE
J
G
500
= 125ºC, V
6
= 125ºC
= 20 Ω
= 1250V
750
8
t
vs. Gate Resistance
d(off)
GE
1000
- - - -
= 15V
10
R
G
V
- Ohms
CE
I
1250
0.001
C
12
= 150A, 50A
- Volts
1500
14
1750
16
Fig. 17. Maximum Transient Thermal Impedance
2000
18
2250
IXGH25N250 IXGT25N250 IXGV25N250S
20
0.01
280
265
250
235
220
205
190
175
160
145
130
115
100
Pulse Width - Seconds
2500
10000
1000
100
10
16
14
12
10
8
6
4
2
0
0
0
0.1
V
I
I
C
G
f = 1 MHz
CE
= 50A
= 10 mA
10
5
= 1250V
10
20
Fig. 14. Gate Charge
Fig. 16. Capacitance
Q
G
15
30
- NanoCoulombs
V
CE
IXYS REF: G_25N250 (5P-P528) 04-27-07-D.xls
C ies
C oes
C res
- Volts
20
40
1
25
50
30
60
35
70
10
40
80