IXDH30N120AU1 IXYS, IXDH30N120AU1 Datasheet
IXDH30N120AU1
Manufacturer Part Number
IXDH30N120AU1
Description
IGBT W/DIODE 1200V 50A TO-247AD
Manufacturer
IXYS
Datasheet
1.IXDH30N120AU1.pdf
(2 pages)
Specifications of IXDH30N120AU1
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Lead Free Status / RoHS Status
Request inventory verification / Request inventory verification
Igbt Type
-
IXYS reserves the right to change limits, test conditions and dimensions.
B1 - 84
High Voltage IGBT
with Diode
Short Circuit SOA Capability
Preliminary Data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
I
I
V
C25
C90
CM
CES
GES
SC
J
JM
stg
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 H
V
R
T
Mounting torque
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
GE
GE
G
CE
CE
CE
= 47
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 15 V, V
= 25 C
= 5 mA, V
= 1 mA, V
= V
= 0.8 • V
= 0 V, V
= 25 A, V
CES
, non repetitive
, V
GE
VJ
CE
CES
GE
GE
GE
CE
= 125 C, R
= 20 V
= V
, V
= 0 V
= 15 V
= V
= 0 V
GE
CES
GE
= 0 V T
IGBT
, T
GE
J
= 1 M
= 125 C
G
= 47
T
(T
J
J
= 25 C
= 125 C
J
= 25 C, unless otherwise specified)
IXDH 30N120AU1
IXDT 30N120AU1
1200
min.
Characteristic Values
4
-55 ... +150
-55 ... +150
Maximum Ratings
I
typ.
5.5
0.9
2,5
CM
@ V
1.1/10 Nm/lb.in.
2
1200
1200
= 50
100
300
150
300
CES
20
30
50
31
10
6
max.
500
6.5
1.1
3
mA
mA
nA
W
V
V
V
V
A
A
A
A
V
V
V
g
C
C
C
C
s
TO-247 AD (IXDH)
TO-268 AA (IXDT)
G = Gate,
E = Emitter,
Features
Applications
Advantages
V
I
V
C25
Square RBSOA
International standard package
Low V
- for minimum on-state conduction
Low package inductance
Fast Recovery Epitaxial Diode
- short t
Space savings
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
High power density
Surface mountable,
high power packager
CES
CE(sat) typ
losses
© 1998 IXYS All rights reserved
G
CE(sat)
C
rr
and I
G
E
E
= 1200 V
= 50 A
= 2.5 V
C = Collector,
TAB = Collector
RM
C (TAB)
C (TAB)
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IXDH30N120AU1 Summary of contents
Page 1
... CES CE CES 0.8 • CES GES CE(sat IXYS reserves the right to change limits, test conditions and dimensions IXDH 30N120AU1 IXDT 30N120AU1 Maximum Ratings 1200 = 1 M 1200 100 = CES = 125 300 -55 ... +150 150 -55 ... +150 1.1/10 Nm/lb.in. 6 300 Characteristic Values ( unless otherwise specified) J min ...
Page 2
... 600 -di /dt = 200 600 -di/dt = 200 thJC IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: © 1998 IXYS All rights reserved Characteristic Values ( unless otherwise specified) J min. typ. max. 1650 250 110 TBD = 0.5 V TBD CE CES TBD 75 150 65 130 ...