IXGA30N60C3C1 IXYS, IXGA30N60C3C1 Datasheet

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IXGA30N60C3C1

Manufacturer Part Number
IXGA30N60C3C1
Description
IGBT C3 30A 600V TO-263
Manufacturer
IXYS
Series
GenX3SC™r
Datasheet

Specifications of IXGA30N60C3C1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 20A
Current - Collector (ic) (max)
60A
Power - Max
220W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (3 leads + tab)
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Tj=25°c, Igbt, (ns)
47
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.33
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
13
Rthjc, Max, Diode, (ºc/w)
1.1
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Speed PT IGBTs for
40 - 100kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
GenX3
w/ SiC Anti-Parallel
Diode
C25
C110
F110
CM
CES
GES
J
JM
stg
L
CES
CGR
GES
GEM
C
SOLD
GE(th)
CE(sat)
d
J
= 25°C Unless Otherwise Specified)
Test Conditions
TM
V
V
I
I
T
T
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
TO-263
TO-220
TO-247
Mounting Torque (TO-220 & TO-247)
C
C
CE
CE
C
J
C
C
C
C
C
GE
= 20A, V
= 250μA, V
= 25°C to 150°C, R
= 25°C
= 25°C to 150°C
= 110°C
= 110°C
= 25°C
= 25°C, 1ms
600V IGBT
= 0V, V
= V
= 15V, T
CES
, V
GE
GE
GE
VJ
= 15V, Note 1
CE
= ± 20V
= 125°C, R
= 0V
= V
GE
GE
= 1MΩ
G
= 5Ω
Preliminary Technical Information
T
T
J
J
= 125°C
= 125°C
IXGA30N60C3C1
IXGP30N60C3C1
IXGH30N60C3C1
-55 ... +150
-55 ... +150
Min.
3.5
I
@ ≤ V
CM
Characteristic Values
1.13/10
Maximum Ratings
= 60
± 20
± 30
600
600
150
150
220
300
260
60
30
13
2.5
3.0
6.0
CES
Typ.
1.8
2.6
±100 nA
Nm/lb.in.
5.5
300 μA
25 μA
3.0
Max.
°C
°C
°C
°C
°C
W
V
V
A
A
g
V
V
V
V
V
A
A
A
g
g
V
I
V
t
TO-263 (IXGA)
TO-220 (IXGP)
TO-247 (IXGH)
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Schottky Diode
International Standard Packages
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
C
G
E
E
E
≤ ≤ ≤ ≤ ≤ 3.0V
= 600V
= 47ns
= 30A
C
TAB = Collector
C (TAB)
C (TAB)
C (TAB)
= Collector
DS100142A(06/09)

Related parts for IXGA30N60C3C1

IXGA30N60C3C1 Summary of contents

Page 1

... CES CE CES 0V ± 20V GES 20A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 Maximum Ratings 600 600 ± 20 ± 150 = 5Ω ≤ V CES 220 -55 ... +150 150 -55 ... +150 300 260 1.13/10 Nm/lb.in. 2.5 3 ...

Page 2

... IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796 IXGA30N60C3C1 IXGP30N60C3C1 Characteristic Values Min. Typ. Max 1075 196 ...

Page 3

... TO-263 (IXGA) Outline TO-220 (IXGP) Outline Pins Gate 2 - Drain 3 - Source 4 - Drain TO-247 (IXTH) Outline ∅ Terminals Gate 2 - Drain © 2009 IXYS CORPORATION, All Rights Reserved IXGA30N60C3C1 IXGP30N60C3C1 Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 ...

Page 4

... Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.5 5.0 4 40A C 4.0 20A 3.5 10A 3.0 2 Volts GE IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXGA30N60C3C1 IXGP30N60C3C1 180 V = 15V GE 160 13V 140 11V 120 100 2.4 2.8 3.2 3.6 0 1.1 = 15V ...

Page 5

... Fig. 7. Transconductance 40º 25ºC 16 125º Amperes C Fig. 9. Capacitance 10,000 MHz 1,000 100 Volts CE 1.00 0.10 0.01 0.00001 0.0001 © 2009 IXYS CORPORATION, All Rights Reserved IXGA30N60C3C1 IXGP30N60C3C1 300V 20A ies oes < 10V / ns C res 0 100 150 Fig. 11. Maximum Transient Thermal Impedance for IGBT ...

Page 6

... V = 15V G GE 140 V = 300V CE 120 T = 125ºC J 100 25º Amperes C IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXGA30N60C3C1 IXGP30N60C3C1 0.8 0.6 E off 0.7 0.5 Ω 300V 0 40A C 0.4 0.5 0.4 0.3 0.3 0.2 0 20A C 0.1 0.1 ...

Page 7

... Ohms G Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature d(on 5Ω 15V 300V Degrees Centigrade J 10.000 1.000 0.100 0.010 0.001 0.00001 0.0001 © 2009 IXYS CORPORATION, All Rights Reserved IXGA30N60C3C1 IXGP30N60C3C1 5Ω 300V 20A 40A 20A 105 115 125 0.0 Fig. 22. Maximum Transient Thermal Impedance for Diode ...

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