PMBFJ177,215 NXP Semiconductors, PMBFJ177,215 Datasheet - Page 5
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PMBFJ177,215
Manufacturer Part Number
PMBFJ177,215
Description
JFET P-CHAN 30V SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ176215.pdf
(8 pages)
Specifications of PMBFJ177,215
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
1.5mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
800mV @ 10nA
Input Capacitance (ciss) @ Vds
8pF @ 10V (VGS)
Resistance - Rds(on)
300 Ohm
Mounting Type
Surface Mount
Power - Max
300mW
Configuration
Single
Transistor Polarity
P-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
20 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
30 V
Mounting Style
SMD/SMT
Channel Type
P
Gate-source Voltage (max)
30V
Drain Current (max)
20mA
Drain-gate Voltage (max)
30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5033-2
933908930215
PMBFJ177 T/R
PMBFJ177 T/R
PMBFJ177,215
933908930215
PMBFJ177 T/R
PMBFJ177 T/R
PMBFJ177,215
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBFJ177,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
PACKAGE OUTLINE
April 1995
P-channel silicon field-effect transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
5
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
PMBFJ174 to 177
L p
A
Q
c
Product specification
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23