BFR30,215 NXP Semiconductors, BFR30,215 Datasheet - Page 4

FET N-CHAN 25V SOT-23

BFR30,215

Manufacturer Part Number
BFR30,215
Description
FET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR30,215

Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-23
Channel Type
N
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
-25V
Drain-source Volt (max)
25V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933163480215::BFR30 T/R::BFR30 T/R
NXP Semiconductors
CHARACTERISTICS
T
1997 Dec 05
I
I
V
V
V
y
y
y
y
C
C
V
SYMBOL
j
GSS
DSS
= 25 C unless otherwise specified.
GS
GS
GSoff
n
N-channel field-effect transistors
is
rs
fs
fs
os
os
gate cut-off current
drain current
gate-source voltage
gate-source voltage
gate-source cut-off voltage
common-source transfer admittance
common-source transfer admittance
common source output admittance
common source output admittance
input capacitance
feedback capacitance
equivalent input noise voltage
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
BFR30
BFR31
PARAMETER
V
V
I
I
I
I
T
I
T
I
I
V
V
I
B = 0.6 to 100 Hz
D
D
D
D
D
D
D
D
amb
amb
DS
GS
DS
DS
I
I
I
I
= 1 mA; V
= 50 A; V
= 0.5 nA; V
= 1 mA; V
= 200 A; V
= 1 mA; V
= 200 A; V
= 200 A; V
D
D
D
D
= 0; V
= 10 V; f = 1 MHz
= 10 V; f = 1 MHz; T
= 0; V
= 1 mA
= 0.2 nA
= 1 mA
= 200 A
= 25 C
= 25 C
4
GS
DS
CONDITIONS
DS
DS
DS
DS
= 10 V
= 10 V
DS
DS
DS
DS
= 10 V
= 10 V; f = 1 kHz;
= 10 V; f = 1 kHz
= 10 V
= 10 V
= 10 V; f = 1 kHz;
= 10 V; f = 1 kHz
= 10 V;
amb
= 25 C
4
1
0.7
0
1
1.5
0.5
0.75
MIN.
BFR30; BFR31
Product specification
0.2
10
5
3
1.3
4
2
5
2.5
4
4.5
40
25
20
15
4
4
1.5
1.5
0.5
MAX.
nA
mA
mA
V
V
V
V
V
V
mS
mS
mS
mS
S
S
S
S
pF
pF
pF
pF
V
UNIT

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