J176,126 NXP Semiconductors, J176,126 Datasheet - Page 8

• Manufacturer Part Number: J176,126
• Description: JFET P-CHAN 30V SOT-54
• Manufacturer: NXP Semiconductors

Specifications of J176,126

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 2mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: P-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 1V @ 10nA
• Input Capacitance (ciss) @ Vds: 8pF @ 10V (VGS)
• Resistance - Rds(on): 250 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 250 Ohms
• Drain Source Voltage Vds: 30 V
• Gate-source Cutoff Voltage: 1 V to 4 V
• Gate-source Breakdown Voltage: 30 V
• Maximum Drain Gate Voltage: 30 V
• Continuous Drain Current: 35 mA
• Drain Current (idss At Vgs=0): 2 mA to 35 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934005310126; J176 AMO; J176 AMO

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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R77/02/8
Date of release: April 1995