SIB911DK-T1-GE3 Vishay, SIB911DK-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIB911DK-T1-GE3
• Description: MOSFET DL P-CH 20V PPAK SC75-6
• Manufacturer: Vishay

Specifications of SIB911DK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 8V
• Input Capacitance (ciss) @ Vds: 115pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.295 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 560mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB911DK-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74475
S-80515-Rev. B, 10-Mar-08
0.8
0.7
0.6
0.5
0.4
0.3
0.2
On-Resistance vs. Drain Current and Gate Voltage
5
4
3
2
1
0
8
6
4
2
0
0.0
0.0
0
V
I
V
GS
D
GS
= 1.7 A
= 5 thru 3.5 V
= 1.8 V
0.5
0.5
1
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
1.0
1.0
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
V
2
DS
V
GS
= 10 V
1.5
1.5
= 2.5 V
V
GS
3
V
= 4.5 V
DS
2.0
2.0
= 16 V
3 V
4
2.5
2.5
2.5 V
1.5 V
2 V
New Product
1 V
3.0
3.0
5
200
160
120
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
V
I
rss
D
- 25
GS
= 1.5 A
= 4.5 V, 2.5 V, 1.8 V;
4
V
V
0.5
GS
DS
Transfer Characteristics
T
0
C
J
C
25 °C
T
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
iss
= 125 °C
Capacitance
25
8
1.0
50
Vishay Siliconix
- 55 °C
12
75
SiB911DK
1.5
100
www.vishay.com
16
125
20
150
2.0
3