SIB911DK-T1-GE3 Vishay, SIB911DK-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIB911DK-T1-GE3
• Description: MOSFET DL P-CH 20V PPAK SC75-6
• Manufacturer: Vishay

Specifications of SIB911DK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 8V
• Input Capacitance (ciss) @ Vds: 115pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.295 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 560mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB911DK-T1-GE3TR

SiB911DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.1
0.8
0.7
0.6
0.5
0.4
0.3
10
1
0.0
- 50
Soure-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
I
D
T
J
T
= 250 µA
25
- Temperature (°C)
J
= 150 °C
0.6
50
75
0.8
0.01
0.1
10
1
100
0.1
T
J
* V
1.0
Safe Operating Area, Junction-to-Ambient
= 25 °C
Single Pulse
GS
Limited by
125
T
A
= 25 °C
V
minimum V
New Product
1.2
150
DS
- Drain-to-Source Voltage (V)
R
DS(on)*
1
GS
BV
at which R
DSS
I
Limited
DM
Limited
DS(on)
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
8
6
4
2
0
0.001
is specified
0
100 µs
1 ms
10 ms
1 s, 10 s
DC
100 ms
On-Resistance vs. Gate-to-Source Voltage
I
Single Pulse Power, Junction-to-Ambient
D
= 1.5 A
0.01
100
1
V
GS
25 °C
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
1
S-80515-Rev. B, 10-Mar-08
125 °C
Document Number: 74475
3
10
4
100
1000
5