SIB911DK-T1-GE3 Vishay, SIB911DK-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIB911DK-T1-GE3
• Description: MOSFET DL P-CH 20V PPAK SC75-6
• Manufacturer: Vishay

Specifications of SIB911DK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 8V
• Input Capacitance (ciss) @ Vds: 115pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.295 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.6A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 560mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB911DK-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74475
S-80515-Rev. B, 10-Mar-08
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
4
3
2
1
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiB911DK
www.vishay.com
125
150
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