SIA513DJ-T1-GE3 Vishay, SIA513DJ-T1-GE3 Datasheet

MOSFET N/P-CH 20V PWRPAK SC70-6

SIA513DJ-T1-GE3

Manufacturer Part Number
SIA513DJ-T1-GE3
Description
MOSFET N/P-CH 20V PWRPAK SC70-6
Manufacturer
Vishay
Datasheet

Specifications of SIA513DJ-T1-GE3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A, 3.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
8 S, 3.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A @ N Channel or 3.3 A @ P Channel
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIA513DJ-T1-GE3TR
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
N-Channel
P-Channel
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
Ordering Information: SiA513DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
PowerPAK SC-70-6 Dual
2.05 mm
6
V
D
DS
- 20
1
20
(V)
5
G
2
h
D
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
1
0.110 at V
0.185 at V
4
0.060 at V
0.092 at V
S
S
1
2
1
R
D
J
N- and P-Channel 20-V (D-S) MOSFET
G
DS(on)
2
= 150 °C)
1
b, f
2
GS
GS
GS
GS
2.05 mm
D
= - 4.5 V
= - 2.5 V
(Ω)
2
= 4.5 V
= 2.5 V
3
I
- 4.5
- 4.5
D
4.5
4.5
Part # code
(A)
d, e
a
a
a
a
A
= 25 °C, unless otherwise noted
Q
Steady State
3.5 nC
T
T
T
T
T
T
T
T
T
T
g
3 nC
C
C
A
A
C
A
C
C
A
A
(Typ.)
New Product
t ≤ 5 s
Marking Code
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
X X X
E B X
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Portable Devices
Lot Traceability
and Date code
Symbol
Symbol
T
R
R
J
V
V
I
SC-70 Package
- Small Footprint Area
- Low On-Resistance
P
, T
DM
I
I
thJA
thJC
GS
DS
D
S
D
stg
Typ.
12.5
®
52
N-Channel
N-Channel
G
Power MOSFETs
4.5
1
3.2
1.6
1.9
1.2
4.5
4.5
4.5
6.5
20
15
a, b, c
5
N-Channel MOSFET
b, c
b, c
b, c
b, c
a
a
a
Max.
65
16
- 55 to 150
± 12
260
D
S
1
1
Typ.
12.5
52
P-Channel
P-Channel
- 3.3
- 2.4
- 1.6
1.9
1.2
- 4.5
- 4.5
- 4.5
G
- 20
- 10
Vishay Siliconix
6.5
2
5
b, c
b, c
b, c
b, c
b, c
P-Channel MOSFET
a
a
a
Max.
65
16
®
SiA513DJ
www.vishay.com
S
D
2
2
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SIA513DJ-T1-GE3 Summary of contents

Page 1

... 2. Ordering Information: SiA513DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...

Page 2

... SiA513DJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... GEN g P-Channel t d(off) = 3.9 Ω ≅ GEN ° 3 2 N-Channel 3.6 A, di/dt = 100 A/µ P-Channel 2.6 A, di/ 100 A/µ SiA513DJ Vishay Siliconix Min. Typ. Max Ω Ω Ω N-Ch 4.5 P-Ch - 4.5 N-Ch ...

Page 4

... SiA513DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1.0 1 Output Characteristics 0.20 0. 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current 4 Total Gate Charge (nC) g Gate Charge www.vishay.com 4 New Product 2 1.5 V 2.0 2 125 °C ...

Page 5

... Limited DS(on °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient SiA513DJ Vishay Siliconix ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 5 0 0.001 0.01 0 100 Pulse (s) Single Pulse Power 100 µ ...

Page 6

... SiA513DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Document Number: 70443 S-80437-Rev. B, 03-Mar-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -3 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA513DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = °C ( ...

Page 8

... SiA513DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1.0 1 Output Characteristics 0.30 0. 0.10 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current 3 Total Gate Charge (nC) g Gate Charge www.vishay.com 8 New Product = 5 thru 1.5 V 2.0 2.5 3 ...

Page 9

... Limited DS(on °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient SiA513DJ Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source 0.01 0 100 Pulse (s) Single Pulse Power 100 µ ...

Page 10

... SiA513DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 6 Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Document Number: 70443 S-80437-Rev. B, 03-Mar-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -3 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA513DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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