SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet
SIA513DJ-T1-E3
Specifications of SIA513DJ-T1-E3
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SIA513DJ-T1-E3 Summary of contents
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... 2. Ordering Information: SiA513DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SiA513DJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... 3 2 N-Channel 3.6 A, di/dt = 100 A/µ P-Channel 2.6 A, di/ 100 A/µ SiA513DJ Vishay Siliconix Min. Typ. Max Ω Ω ...
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... SiA513DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1.0 1 Output Characteristics 0.20 0. 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current 4 ...
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... DS(on °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient SiA513DJ Vishay Siliconix ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 5 0 0.001 ...
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... SiA513DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 70443 S-80437-Rev. B, 03-Mar-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -3 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA513DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... SiA513DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1.0 1 Output Characteristics 0.30 0. 0.10 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current 3 ...
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... DS(on °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient SiA513DJ Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source 0.01 0 ...
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... SiA513DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 6 Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 70443 S-80437-Rev. B, 03-Mar-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -3 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SiA513DJ Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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PowerPAK SC70-6L PIN1 PIN6 K3 BACKSIDE VIEW OF SINGLE SINGLE PAD DIM MILLIMETERS Min Nom Max A 0.675 0.75 0. 0.05 b 0.23 0.30 0.38 C 0.15 0.20 0.25 D 1.98 2.05 2.15 D1 0.85 0.95 ...
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Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK 0.325 (0.013) 2.500 (0.098) 0.950 (0.037) 0.275 (0.011) Return to Index www.vishay.com 12 ® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.613 (0.024) 0.475 (0.019) 0.160 (0.006) 1 1.600 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...