SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SIA513DJ-T1-E3
• Description: MOSFET 20V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA513DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 60 mOhms, 110 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 40 ns at N Channel, 45 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 40 ns at N Channel, 45 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 20 ns at N Channel, 15 ns at P Channel
• Part # Aliases: SIA513DJ-E3

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
100
1.2
1.1
1.0
0.9
0.8
0.7
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
T
25
- Temperature (°C)
J
= 150 °C
0.6
I
D
50
= 250 µA
0.8
75
0.01
0.1
10
T
1
1.0
J
0.1
100
= 25 °C
R
Limited by
* V
Safe Operating Area, Junction-to-Ambient
DS(on)
Single Pulse
GS
T
1.2
A
125
= 25 °C
*
minimum V
V
New Product
DS
150
1.4
- Drain-to-Source Voltage (V)
1
GS
BVDSS Limited
at which R
DS(on)
10
0.4
0.3
0.2
0.1
0.0
15
20
10
0.001
5
0
is specified
1
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
I
D
= 2.5 A
0.01
On-Resistance vs. Gate-to-Source
100
V
2
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
0.1
Pulse (s)
3
1
Vishay Siliconix
SiA513DJ
10
T
T
A
A
= 25 °C
= 125 °C
4
www.vishay.com
100
5
1000
9