SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 9
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SIA513DJ-T1-E3
Manufacturer Part Number
SIA513DJ-T1-E3
Description
MOSFET 20V 4.5A 6.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SIA513DJ-T1-E3.pdf
(14 pages)
Specifications of SIA513DJ-T1-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Resistance Drain-source Rds (on)
60 mOhms, 110 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70-6 Dual
Fall Time
40 ns at N Channel, 45 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
6.5 W
Rise Time
40 ns at N Channel, 45 ns at P Channel
Factory Pack Quantity
3000
Typical Turn-off Delay Time
20 ns at N Channel, 15 ns at P Channel
Part # Aliases
SIA513DJ-E3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA513DJ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
100
1.2
1.1
1.0
0.9
0.8
0.7
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
T
25
- Temperature (°C)
J
= 150 °C
0.6
I
D
50
= 250 µA
0.8
75
0.01
0.1
10
T
1
1.0
J
0.1
100
= 25 °C
R
Limited by
* V
Safe Operating Area, Junction-to-Ambient
DS(on)
Single Pulse
GS
T
1.2
A
125
= 25 °C
*
minimum V
V
New Product
DS
150
1.4
- Drain-to-Source Voltage (V)
1
GS
BVDSS Limited
at which R
DS(on)
10
0.4
0.3
0.2
0.1
0.0
15
20
10
0.001
5
0
is specified
1
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC
I
D
= 2.5 A
0.01
On-Resistance vs. Gate-to-Source
100
V
2
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
0.1
Pulse (s)
3
1
Vishay Siliconix
SiA513DJ
10
T
T
A
A
= 25 °C
= 125 °C
4
www.vishay.com
100
5
1000
9