SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SIA513DJ-T1-E3
• Description: MOSFET 20V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA513DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 60 mOhms, 110 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 40 ns at N Channel, 45 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 40 ns at N Channel, 45 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 20 ns at N Channel, 15 ns at P Channel
• Part # Aliases: SIA513DJ-E3

SiA513DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
15
12
10
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
= 4.5 A
V
On-Resistance vs. Drain Current
GS
0.5
3
= 2.5 V
V
DS
Output Characteristics
2
Q
V
-
g
DS
1.0
D
- Total Gate Charge (nC)
I
D
r
Gate Charge
i a
= 10 V
- Drain Current (A)
V
- n
6
GS
o t
S -
= 5 thru 3 V
1.5
4
o
V
u
c r
GS
e
9
= 4.5 V
V
o
V
2.0
a t l
DS
g
2 V
= 16 V
1.5 V
e
6
(
) V
12
2.5
2.5 V
1 V
New Product
3.0
15
8
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
0.0
- 50
0
C
On-Resistance vs. Junction Temperature
rss
I
- 25
D
0.5
= 3.4 A
4
V
V
Transfer Characteristics
DS
T
GS
0
J
T
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
1.0
= 25 °C
T
C
Capacitance
25
8
= 125 °C
V
C
1.5
C
S-80437-Rev. B, 03-Mar-08
50
GS
iss
oss
Document Number: 70443
= 2.5 V
12
75
2.0
T
C
= - 55 °C
100
V
GS
16
2.5
= 4.5 V
125
3.0
20
150