SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
SIA513DJ-T1-E3
Manufacturer Part Number
SIA513DJ-T1-E3
Description
MOSFET 20V 4.5A 6.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SIA513DJ-T1-E3.pdf
(14 pages)
Specifications of SIA513DJ-T1-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Resistance Drain-source Rds (on)
60 mOhms, 110 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70-6 Dual
Fall Time
40 ns at N Channel, 45 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
6.5 W
Rise Time
40 ns at N Channel, 45 ns at P Channel
Factory Pack Quantity
3000
Typical Turn-off Delay Time
20 ns at N Channel, 15 ns at P Channel
Part # Aliases
SIA513DJ-E3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA513DJ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiA513DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
15
12
10
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
= 4.5 A
V
On-Resistance vs. Drain Current
GS
0.5
3
= 2.5 V
V
DS
Output Characteristics
2
Q
V
-
g
DS
1.0
D
- Total Gate Charge (nC)
I
D
r
Gate Charge
i a
= 10 V
- Drain Current (A)
V
- n
6
GS
o t
S -
= 5 thru 3 V
1.5
4
o
V
u
c r
GS
e
9
= 4.5 V
V
o
V
2.0
a t l
DS
g
2 V
= 16 V
1.5 V
e
6
(
) V
12
2.5
2.5 V
1 V
New Product
3.0
15
8
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
0.0
- 50
0
C
On-Resistance vs. Junction Temperature
rss
I
- 25
D
0.5
= 3.4 A
4
V
V
Transfer Characteristics
DS
T
GS
0
J
T
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
1.0
= 25 °C
T
C
Capacitance
25
8
= 125 °C
V
C
1.5
C
S-80437-Rev. B, 03-Mar-08
50
GS
iss
oss
Document Number: 70443
= 2.5 V
12
75
2.0
T
C
= - 55 °C
100
V
GS
16
2.5
= 4.5 V
125
3.0
20
150