SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SIA513DJ-T1-E3
• Description: MOSFET 20V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA513DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 60 mOhms, 110 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 40 ns at N Channel, 45 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 40 ns at N Channel, 45 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 20 ns at N Channel, 15 ns at P Channel
• Part # Aliases: SIA513DJ-E3

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
I
0.4
T
D
J
T
= 250 µA
25
- Temperature (°C)
J
= 150 °C
0.6
50
75
0.8
0.01
100
0.1
10
1
0.1
100
T
Limited by
R
J
* V
DS(on)
Safe Operating Area, Junction-to-Ambient
= 25 °C
Single Pulse
T
1.0
A
GS
125
= 25 °C
*
V
minimum V
DS
New Product
150
1.2
- Drain-to-Source Voltage (V)
1
BVDSS Limited
GS
at which R
10
DS(on)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
15
20
10
5
0.001
0
is specified
1 ms
10 ms
100 µs
100 ms
1 s, 10 s
DC
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 3.4 A
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
Single Pulse Power
2
Pulse (s)
1
Vishay Siliconix
3
SiA513DJ
10
T
www.vishay.com
A
T
= 25 °C
A
4
100
= 125 °C
1000
5
5