SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SIA513DJ-T1-E3
• Description: MOSFET 20V 4.5A 6.5W
• Manufacturer: Vishay/Siliconix

Specifications of SIA513DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Resistance Drain-source Rds (on): 60 mOhms, 110 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6 Dual
• Fall Time: 40 ns at N Channel, 45 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 6.5 W
• Rise Time: 40 ns at N Channel, 45 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 20 ns at N Channel, 15 ns at P Channel
• Part # Aliases: SIA513DJ-E3

SiA513DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
10
8
6
4
2
0
8
6
4
2
0
0.0
0
0
I
D
= 3.3 A
V
GS
On-Resistance vs. Drain Current
0.5
V
= 2.5 V
DS
2
V
DS
Q
= 10 V
Output Characteristics
2
g
-
- Total Gate Charge (nC)
1.0
V
D
I
D
GS
r
Gate Charge
i a
- Drain Current (A)
- n
4
= 4.5 V
o t
S -
1.5
4
V
o
u
GS
c r
e
= 5 thru 3 V
6
V
V
o
2.0
DS
a t l
g
= 16 V
e
6
(
) V
8
2.5
2.5 V
1.5 V
2 V
New Product
3.0
10
8
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
0.0
- 50
0
On-Resistance vs. Junction Temperature
C
I
rss
- 25
D
= 2.5 A
0.5
4
V
V
Transfer Characteristics
GS
DS
T
0
J
T
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
= 25 °C
Capacitance
T
25
C
1.0
8
= 125 °C
C
C
oss
50
iss
S-80437-Rev. B, 03-Mar-08
V
Document Number: 70443
GS
1.5
12
75
= 2.5 V
T
C
= - 55 °C
100
V
2.0
16
GS
= 4.5 V
125
2.5
150
20