SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 8
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SIA513DJ-T1-E3
Manufacturer Part Number
SIA513DJ-T1-E3
Description
MOSFET 20V 4.5A 6.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SIA513DJ-T1-E3.pdf
(14 pages)
Specifications of SIA513DJ-T1-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Resistance Drain-source Rds (on)
60 mOhms, 110 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70-6 Dual
Fall Time
40 ns at N Channel, 45 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
6.5 W
Rise Time
40 ns at N Channel, 45 ns at P Channel
Factory Pack Quantity
3000
Typical Turn-off Delay Time
20 ns at N Channel, 15 ns at P Channel
Part # Aliases
SIA513DJ-E3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA513DJ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiA513DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
10
8
6
4
2
0
8
6
4
2
0
0.0
0
0
I
D
= 3.3 A
V
GS
On-Resistance vs. Drain Current
0.5
V
= 2.5 V
DS
2
V
DS
Q
= 10 V
Output Characteristics
2
g
-
- Total Gate Charge (nC)
1.0
V
D
I
D
GS
r
Gate Charge
i a
- Drain Current (A)
- n
4
= 4.5 V
o t
S -
1.5
4
V
o
u
GS
c r
e
= 5 thru 3 V
6
V
V
o
2.0
DS
a t l
g
= 16 V
e
6
(
) V
8
2.5
2.5 V
1.5 V
2 V
New Product
3.0
10
8
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
0.0
- 50
0
On-Resistance vs. Junction Temperature
C
I
rss
- 25
D
= 2.5 A
0.5
4
V
V
Transfer Characteristics
GS
DS
T
0
J
T
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
= 25 °C
Capacitance
T
25
C
1.0
8
= 125 °C
C
C
oss
50
iss
S-80437-Rev. B, 03-Mar-08
V
Document Number: 70443
GS
1.5
12
75
= 2.5 V
T
C
= - 55 °C
100
V
2.0
16
GS
= 4.5 V
125
2.5
150
20