SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 2
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SIA513DJ-T1-E3
Manufacturer Part Number
SIA513DJ-T1-E3
Description
MOSFET 20V 4.5A 6.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SIA513DJ-T1-E3.pdf
(14 pages)
Specifications of SIA513DJ-T1-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Resistance Drain-source Rds (on)
60 mOhms, 110 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70-6 Dual
Fall Time
40 ns at N Channel, 45 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
6.5 W
Rise Time
40 ns at N Channel, 45 ns at P Channel
Factory Pack Quantity
3000
Typical Turn-off Delay Time
20 ns at N Channel, 15 ns at P Channel
Part # Aliases
SIA513DJ-E3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA513DJ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiA513DJ
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
iss
rss
gd
fs
gs
g
g
/T
/T
J
J
V
V
DS
New Product
DS
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
= - 10 V, V
= - 10 V, V
V
= - 20 V, V
V
V
= 10 V, V
V
= - 10 V, V
V
= 10 V, V
V
= 20 V, V
V
V
GS
= 10 V, V
V
V
V
V
V
DS
GS
DS
V
V
DS
GS
DS
DS
DS
GS
DS
GS
GS
DS
DS
= - 2.5 V, I
≤ - 5 V, V
= - 4.5 V, I
= V
= - 10 V, I
= 0 V, V
= 0 V, I
= V
= - 20 V, V
= 0 V, I
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
I
I
= 20 V, V
= 10 V, I
D
D
I
I
N-Channel
N-Channel
D
D
P-Channel
P-Channel
f = 1 MHz
GS
GS
Test Conditions
= - 250 µA
= - 250 µA
GS
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= - 10 V, I
= 4.5 V, I
D
= 10 V, I
D
= 0 V, T
D
GS
= 0 V, f = 1 MHz
D
= 0 V, T
GS
GS
= 0 V, f = 1 MHz
= - 250 µA
D
= - 250 µA
D
D
= 250 µA
D
D
D
= 250 µA
GS
GS
= - 0.54 A
= ± 12 V
= 3.4 A
= - 2.5 A
= 3.4 A
= - 2.5 A
= 1.1 A
= 4.5 V
= - 4.5 V
= 0 V
= 0 V
J
D
J
D
D
= 55 °C
D
= 55 °C
= 4.5 A
= 4.5 A
= - 3.3 A
= - 3.3 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.6
- 20
0.6
- 5
20
10
S-80437-Rev. B, 03-Mar-08
Document Number: 70443
0.050
0.091
0.076
0.152
Typ.
- 3.5
- 16
360
250
2.5
3.5
7.5
3.5
0.9
0.7
0.7
0.9
2.5
22
70
70
40
45
8
6
3
8
± 100
± 100
0.110
0.185
0.060
0.092
Max.
- 1.5
- 10
1.5
5.3
4.5
- 1
10
12
1
9
mV/°C
Unit
nA
µA
nC
pF
Ω
Ω
V
V
A
S