SIA513DJ-T1-GE3 Vishay, SIA513DJ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA513DJ-T1-GE3
• Description: MOSFET N/P-CH 20V PWRPAK SC70-6
• Manufacturer: Vishay

Specifications of SIA513DJ-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 8 S, 3.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A @ N Channel or 3.3 A @ P Channel
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA513DJ-T1-GE3TR

SiA513DJ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
15
12
10
9
6
3
0
8
6
4
2
0
0.0
0
0
I
D
= 4.5 A
V
On-Resistance vs. Drain Current
GS
0.5
3
= 2.5 V
V
DS
Output Characteristics
2
Q
V
-
g
DS
1.0
D
- Total Gate Charge (nC)
I
D
r
Gate Charge
i a
= 10 V
- Drain Current (A)
V
- n
6
GS
o t
S -
= 5 thru 3 V
1.5
4
o
V
u
c r
GS
e
9
= 4.5 V
V
o
V
2.0
a t l
DS
g
2 V
= 16 V
1.5 V
e
6
(
) V
12
2.5
2.5 V
1 V
New Product
3.0
15
8
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
0.0
- 50
0
C
On-Resistance vs. Junction Temperature
rss
I
- 25
D
0.5
= 3.4 A
4
V
V
Transfer Characteristics
DS
T
GS
0
J
T
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
1.0
= 25 °C
T
C
Capacitance
25
8
= 125 °C
V
C
1.5
C
S-80437-Rev. B, 03-Mar-08
50
GS
iss
oss
Document Number: 70443
= 2.5 V
12
75
2.0
T
C
= - 55 °C
100
V
GS
16
2.5
= 4.5 V
125
3.0
20
150