SIA513DJ-T1-GE3 Vishay, SIA513DJ-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SIA513DJ-T1-GE3
• Description: MOSFET N/P-CH 20V PWRPAK SC70-6
• Manufacturer: Vishay

Specifications of SIA513DJ-T1-GE3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A, 3.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6 Dual
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 8 S, 3.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A @ N Channel or 3.3 A @ P Channel
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA513DJ-T1-GE3TR

SiA513DJ
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
GSS
DSS
DS
g
Q
R
DS
oss
iss
rss
gd
fs
gs
g
g
/T
/T
J
J
V
V
DS
New Product
DS
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
= - 10 V, V
= - 10 V, V
V
= - 20 V, V
V
V
= 10 V, V
V
= - 10 V, V
V
= 10 V, V
V
= 20 V, V
V
V
GS
= 10 V, V
V
V
V
V
V
DS
GS
DS
V
V
DS
GS
DS
DS
DS
GS
DS
GS
GS
DS
DS
= - 2.5 V, I
≤ - 5 V, V
= - 4.5 V, I
= V
= - 10 V, I
= 0 V, V
= 0 V, I
= V
= - 20 V, V
= 0 V, I
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
I
I
= 20 V, V
= 10 V, I
D
D
I
I
N-Channel
N-Channel
D
D
P-Channel
P-Channel
f = 1 MHz
GS
GS
Test Conditions
= - 250 µA
= - 250 µA
GS
GS
GS
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
, I
, I
= - 4.5 V, I
= - 10 V, I
= 4.5 V, I
D
= 10 V, I
D
= 0 V, T
D
GS
= 0 V, f = 1 MHz
D
= 0 V, T
GS
GS
= 0 V, f = 1 MHz
= - 250 µA
D
= - 250 µA
D
D
= 250 µA
D
D
D
= 250 µA
GS
GS
= - 0.54 A
= ± 12 V
= 3.4 A
= - 2.5 A
= 3.4 A
= - 2.5 A
= 1.1 A
= 4.5 V
= - 4.5 V
= 0 V
= 0 V
J
D
J
D
D
= 55 °C
D
= 55 °C
= 4.5 A
= 4.5 A
= - 3.3 A
= - 3.3 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
- 0.6
- 20
0.6
- 5
20
10
S-80437-Rev. B, 03-Mar-08
Document Number: 70443
0.050
0.091
0.076
0.152
Typ.
- 3.5
- 16
360
250
2.5
3.5
7.5
3.5
0.9
0.7
0.7
0.9
2.5
22
70
70
40
45
8
6
3
8
± 100
± 100
0.110
0.185
0.060
0.092
Max.
- 1.5
- 10
1.5
5.3
4.5
- 1
10
12
1
9
mV/°C
Unit
nA
µA
nC
pF
Ω
Ω
V
V
A
S