SI4948BEY-T1-E3 Vishay, SI4948BEY-T1-E3 Datasheet

MOSFET P-CH DUAL 60V 2.4A 8-SOIC

SI4948BEY-T1-E3

Manufacturer Part Number
SI4948BEY-T1-E3
Description
MOSFET P-CH DUAL 60V 2.4A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4948BEY-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.12 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.4 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-3.1A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4948BEY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4948BEY-T1-E3
Manufacturer:
MICRON
Quantity:
2 140
Part Number:
SI4948BEY-T1-E3
Manufacturer:
VISHAY
Quantity:
150
Part Number:
SI4948BEY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4948BEY-T1-E3
0
Company:
Part Number:
SI4948BEY-T1-E3
Quantity:
33 750
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Ordering Information: Si4948BEY-T1-E3 (Lead (Pb)-free)
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
V
DS
- 60
(V)
G
G
S
S
1
1
2
2
Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.150 at V
1
2
3
4
0.120 at V
R
Dual P-Channel 60-V (D-S) 175° MOSFET
Top View
DS(on)
SO-8
J
a
GS
= 150 °C)
GS
a
= - 4.5 V
(Ω)
= - 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
a
A
= 25 °C, unless otherwise noted
I
D
- 3.1
- 2.8
Steady State
Steady State
L = 0.1 mH
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
G
R
R
Definition
J
V
V
E
I
I
P
, T
1
DM
thJA
I
I
AS
thJF
DS
GS
D
AS
S
D
stg
P-Channel MOSFET
S
D
®
1
1
Power MOSFET
Typical
10 s
- 3.1
- 2.6
2.4
1.7
- 2
53
85
30
- 55 to 175
± 20
- 60
- 25
15
11
Steady State
G
Maximum
2
- 2.4
- 2.0
- 1.1
0.95
62.5
110
1.4
37
P-Channel MOSFET
Vishay Siliconix
Si4948BEY
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4948BEY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4948BEY-T1-E3 (Lead (Pb)-free) Si4948BEY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si4948BEY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72847 S09-1002-Rev. B, 01-Jun- °C J 0.8 1.0 1.2 Si4948BEY Vishay Siliconix 1000 800 C iss 600 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 1.6 1 ...

Page 4

... Si4948BEY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 I DM Limited DS(on D(on) Limited ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72847. Document Number: 72847 S09-1002-Rev. B, 01-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4948BEY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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