SI4948BEY Vishay Siliconix, SI4948BEY Datasheet
SI4948BEY
Manufacturer Part Number
SI4948BEY
Description
Dual P-Channel 60-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet
1.SI4948BEY.pdf
(4 pages)
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SI4948BEY-T1-E3
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CHARACTERISTICS
DESCRIPTION
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 72872
S-52399Rev. B, 21-Nov-05
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS.
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
Dual P-Channel 60-V (D-S) 175° MOSFET
The subcircuit
SPICE Device Model Si4948BEY
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
Characteristics
gd
model. All model parameter values are optimized
Vishay Siliconix
www.vishay.com
1
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