SI4948BEY-E3 VISHAY [Vishay Siliconix], SI4948BEY-E3 Datasheet

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SI4948BEY-E3

Manufacturer Part Number
SI4948BEY-E3
Description
Dual P-Channel 60-V (D-S) 175 MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
Document Number: 72847
S-40430—Rev. A, 15-Mar-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
Ordering Information: Si4948BEY—E3 (Lead Free)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−60
60
(V)
J
ti
t A bi
G
G
S
S
1
1
2
2
Si4948BEY -T1—E3 (Lead Free with Tape and Reel)
J
J
a
a
0.150 @ V
1
2
3
4
0.120 @ V
= 150_C)
= 150_C)
t
Dual P-Channel 60-V (D-S) 175_ MOSFET
a
a
Parameter
Parameter
r
DS(on)
Top View
SO-8
GS
a
a
GS
(W)
= −4.5 V
= −10 V
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
−3.1
−2.8
(A)
Symbol
Symbol
G
T
R
R
R
1
V
J
V
E
I
I
P
P
DM
, T
I
I
I
AS
thJA
thJF
DS
GS
D
D
S
AS
D
D
P-Channel MOSFET
stg
D
S
1
1
10 secs
Typical
−3.1
−2.6
2.4
1.7
−2
53
85
30
−55 to 175
"20
−60
−25
15
11
G
2
Steady State
Maximum
P-Channel MOSFET
Vishay Siliconix
−2.4
−2.0
−1.1
0.95
62.5
110
1.4
37
Si4948BEY
S
D
2
2
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1

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SI4948BEY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4948BEY—E3 (Lead Free) Si4948BEY -T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) ...

Page 2

... Si4948BEY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 72847 S-40430—Rev. A, 15-Mar-04 New Product 1000 25_C J 0.8 1.0 1.2 Si4948BEY Vishay Siliconix Capacitance 800 C iss 600 400 200 C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 2 ...

Page 4

... Si4948BEY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −0.4 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product −3 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72847 S-40430—Rev. A, 15-Mar-04 New Product −2 − Square Wave Pulse Duration (sec) Si4948BEY Vishay Siliconix 1 10 www.vishay.com 5 ...

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